IRF9530-220M MOSFET. Datasheet pdf. Equivalent

4.83 (0.190)10.92 (0.430)5.33 (0.210)10.41 (0.410)0.64 (0.025)0.89 (0.035)3.56 (0.140)Dia3.81 (0.150)1 2 30.89 (0.035)Dia.1.27 (0.050)2.54 (0.100) 3.05 (0.120)BSC BSCTO220M (TO-257AB) Pin 1 - Gate Pin 2 - Drain Pin 3 - Source 13.21 (0.52)13.72 (0.54)13.21 (0.52)13

IRF9530NPbF l Advanced Process TechnologyDl Dynamic dv/dt Rating DSS l 175C Operating Temperaturel Fast Switching DS(on) l P-ChannelGl Fully Avalanche Rated D l Lead-FreeSDescription

PD - 91523AIRF9530NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9530NS)VDSS = -100V Low-profile through-hole (IRF9530NL) 175C Operating TemperatureRDS(on) = 0.20 Fast SwitchingG P-ChannelID = -14A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

PD- 95988IRF9530SPbF Lead-Free06/06/05Document Number: 91077 www.vishay.com1IRF9530SPbFDocument Number: 91077 www.vishay.com2IRF9530SPbFDocument Number: 91077 www.vishay.com3IRF9530SPbFDocument Number: 91077 www.vishay.com4IRF9530SPbFDocument Number: 91077 www.vishay.com5IRF9530SPbFDocument Number: 91077 www.vishay.com6IRF9530SPbFPeak Diode R

PD - 91482CIRF9530NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 P-ChannelG Fully Avalanche RatedID = -14ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are

PD- 95439IRF9530NSPbFIRF9530NLPbF Lead-Freewww.irf.com 104/26/05IRF9530NS/LPbF2 www.irf.comIRF9530NS/LPbFwww.irf.com 3IRF9530NS/LPbF4 www.irf.comIRF9530NS/LPbFwww.irf.com 5IRF9530NS/LPbF6 www.irf.comIRF9530NS/LPbFwww.irf.com 7IRF9530NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS

IRF9530S, SiHF9530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 6.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 21 175 C Operating TemperatureConfig

IRF9530S, SiHF9530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 6.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 21 175 C Operating TemperatureConfig

IRF9530, SiHF9530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.30 P-Channel RoHS*Qg (Max.) (nC) 38COMPLIANT 175 C Operating TemperatureQgs (nC) 6.8 Fast SwitchingQgd (nC) 21 Ease of ParallelingConfiguration Single Simple Drive Requir

IRF9530S, SiHF9530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 6.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 21 175 C Operating TemperatureConfig

IRF9530, SiHF9530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.30 P-Channel RoHS*Qg (Max.) (nC) 38COMPLIANT 175 C Operating TemperatureQgs (nC) 6.8 Fast SwitchingQgd (nC) 21 Ease of ParallelingConfiguration Single Simple Drive Requir

IRF9530NPbF l Advanced Process TechnologyDl Dynamic dv/dt Rating DSS l 175C Operating Temperaturel Fast Switching DS(on) l P-ChannelGl Fully Avalanche Rated D l Lead-FreeSDescription

IRF9530NSPbF IRF9530NLPbF Benefits HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) VDSS -100V Low-profile through-hole(IRF9530NL) 175C Operating Temperature RDS(on) 0.20 Fast Switching ID -14A P-Channel Fully Avalanche Rated Lead-Free D D Description Fifth Generation HEXFET Power MOSFETs from In

IRF9530, RF1S9530SMData Sheet July 1999 File Number 2221.412A, 100V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 12A, 100VThese are P-Channel enhancement mode silicon gate rDS(ON) = 0.300power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the

IRF9530SMDMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS !VDSS -100VID(cont) -8ARDS(on) 0.35FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTS

DIP Type MOSFETP-Channel MOSFETIRF9530 (KRF9530)TO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features VDS (V) =-100V ID =-13 A (VGS =-10V) RDS(ON) 205m (VGS =-10V)1.27 0.10 1.52 0.102 RDS(ON) 300m (VGS =-4.5V) 1 30.80 0.10 +0.100.50 0.05 2.40 0.202.54TYP 2.54TYP[2.54 0.20 ] [2.54 0.2

IRF9530NPBFwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.167 at VGS = - 10 V- 18- 100 37 100 % Rg and UIS Tested0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Power Swi

IRF9530Pwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.167 at VGS = - 10 V- 18- 100 37 100 % Rg and UIS Tested0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Power Switch

isc P-Channel MOSFET Transistor IRF9530N,IIRF9530NFEATURESStatic drain-source on-resistance:RDS(on)0.2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andrelia

INCHANGE Semiconductorisc P-Channel Mosfet Transistor IRF9530SFEATURES-12A-100VSingle pulse avalanche energy ratedStatic Drain-Source On-Resistance: R =0.3(Max)DS(on)SOA is power dissipation limitedNanosecond switching speedsLinear transfer characteristicsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONThe

isc P-Channel MOSFET Transistor IRF9530PBFFEATURESStatic drain-source on-resistance:RDS(on)0.3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONPower management in notebook computerPortable equipment and battery powered systemsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

INCHANGE Semiconductorisc P-Channel Mosfet Transistor IRF9530FEATURES-12A-100VSingle pulse avalanche energy ratedStatic Drain-Source On-Resistance: R =0.3(Max)DS(on)SOA is power dissipation limitedNanosecond switching speedsLinear transfer characteristicsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONThe