All MOSFET. SSH4N60 Datasheet

 

SSH4N60 Datasheet and Replacement


   Type Designator: SSH4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 25 nC
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-3P
 

 SSH4N60 substitution

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SSH4N60 Datasheet (PDF)

 ..1. Size:178K  1
 ssp4n55 ssp4n60 ssh4n55 ssh4n60.pdf pdf_icon

SSH4N60

 ..2. Size:441K  semelab
 ssh4n55 ssh4n60.pdf pdf_icon

SSH4N60

SSH4N55 PCB24

 9.1. Size:165K  fairchild semi
 ssh4n90.pdf pdf_icon

SSH4N60

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 9.2. Size:211K  samsung
 ssh4n80as.pdf pdf_icon

SSH4N60

SSH4N80ASAdvanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2. (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charac

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History: FMR21N50ES

Keywords - SSH4N60 MOSFET datasheet

 SSH4N60 cross reference
 SSH4N60 equivalent finder
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