SSH6N80 Datasheet. Specs and Replacement
Type Designator: SSH6N80 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 200 nS
Cossⓘ - Output Capacitance: 210 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO-3P
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SSH6N80 substitution
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SSH6N80 datasheet
ssh6n80as.pdf
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.472 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒
ssh6n55 ssh6n60.pdf
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com ... See More ⇒
ssh6n90a.pdf
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.829 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒
Detailed specifications: SSH11N90, SSH3N90, SSH4N55, SSH4N60, SSH4N80, SSH4N90, SSH5N90, SSH60N08, AO3401, SSH8N70, SSH8N80, SSI2N60B, SSI4N60B, SSM03N70GH, SSM03N70GJ, SSM03N70GP-H, SSM04N70BGF-A
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
