All MOSFET. SSH6N80 Datasheet

 

SSH6N80 Datasheet and Replacement


   Type Designator: SSH6N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: TO-3P
 

 SSH6N80 substitution

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SSH6N80 Datasheet (PDF)

 ..1. Size:272K  semelab
 ssh6n80.pdf pdf_icon

SSH6N80

 0.1. Size:931K  samsung
 ssh6n80as.pdf pdf_icon

SSH6N80

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.472 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 9.1. Size:307K  1
 ssh6n55 ssh6n60.pdf pdf_icon

SSH6N80

www.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.com

 9.2. Size:946K  samsung
 ssh6n90a.pdf pdf_icon

SSH6N80

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

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Datasheet: SSH11N90 , SSH3N90 , SSH4N55 , SSH4N60 , SSH4N80 , SSH4N90 , SSH5N90 , SSH60N08 , AO3400 , SSH8N70 , SSH8N80 , SSI2N60B , SSI4N60B , SSM03N70GH , SSM03N70GJ , SSM03N70GP-H , SSM04N70BGF-A .

History: GP2M023A050N

Keywords - SSH6N80 MOSFET datasheet

 SSH6N80 cross reference
 SSH6N80 equivalent finder
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