All MOSFET. SSI2N60B Datasheet

 

SSI2N60B Datasheet and Replacement


   Type Designator: SSI2N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: I2-PAK

 SSI2N60B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSI2N60B Datasheet (PDF)

 ..1. Size:647K  fairchild semi
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SSI2N60B

November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12.5 nC) planar, DMOS technology. Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored ... See More ⇒

 ..2. Size:648K  fairchild semi
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SSI2N60B

November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12.5 nC) planar, DMOS technology. Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored ... See More ⇒

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SSI2N60B

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SSI2N60B

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Datasheet: SSH4N60 , SSH4N80 , SSH4N90 , SSH5N90 , SSH60N08 , SSH6N80 , SSH8N70 , SSH8N80 , 4435 , SSI4N60B , SSM03N70GH , SSM03N70GJ , SSM03N70GP-H , SSM04N70BGF-A , SSM04N70BGF-H , SSM04N70BGP-A , SSM09N70GP-A .

Keywords - SSI2N60B MOSFET datasheet

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