SSI2N60B Datasheet. Specs and Replacement

Type Designator: SSI2N60B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: I2-PAK

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SSI2N60B datasheet

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SSI2N60B

November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12.5 nC) planar, DMOS technology. Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored ... See More ⇒

 ..2. Size:648K  fairchild semi
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SSI2N60B

November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12.5 nC) planar, DMOS technology. Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored ... See More ⇒

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SSI2N60B

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SSI2N60B

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Detailed specifications: SSH4N60, SSH4N80, SSH4N90, SSH5N90, SSH60N08, SSH6N80, SSH8N70, SSH8N80, 4435, SSI4N60B, SSM03N70GH, SSM03N70GJ, SSM03N70GP-H, SSM04N70BGF-A, SSM04N70BGF-H, SSM04N70BGP-A, SSM09N70GP-A

Keywords - SSI2N60B MOSFET specs

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