SSI2N60B Datasheet and Replacement
Type Designator: SSI2N60B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 12.5 nC
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: I2-PAK
SSI2N60B substitution
SSI2N60B Datasheet (PDF)
ssi2n60b ssi2n60b ssw2n60b.pdf
November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored
ssw2n60b ssi2n60b.pdf
November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored
Datasheet: SSH4N60 , SSH4N80 , SSH4N90 , SSH5N90 , SSH60N08 , SSH6N80 , SSH8N70 , SSH8N80 , 2SK3568 , SSI4N60B , SSM03N70GH , SSM03N70GJ , SSM03N70GP-H , SSM04N70BGF-A , SSM04N70BGF-H , SSM04N70BGP-A , SSM09N70GP-A .
History: BUK455-100B | BUK1M200-50SGTD
Keywords - SSI2N60B MOSFET datasheet
SSI2N60B cross reference
SSI2N60B equivalent finder
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History: BUK455-100B | BUK1M200-50SGTD
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