SSM09N70GP-A MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM09N70GP-A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 156 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 44 nC
Rise Time (tr): 21 nS
Drain-Source Capacitance (Cd): 170 pF
Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
Package: TO-220
SSM09N70GP-A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM09N70GP-A Datasheet (PDF)
ssm09n70gp-a.pdf
SSM09N70GP-AN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM09N70GP-A achieves fast switching performanceBVDSS 650Vwith low gate charge without a complex drive circuit. ItRDS(ON) 0.75is suitable for high voltage applications such as AC/DCconverters, SMPS and general off-line switching circuits.I 9AD Pb-free; RoHS-compliant TO-220The SSM09N70GP
ssm09n90gw.pdf
SSM09N90GWN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM09N90GW acheives fast switching performanceBVDSS 900Vwith low gate charge without a complex drive circuit. It isRDS(ON) 1.2suitable for high voltage applications such as AC/DCconverters and offline power supplies.I 8.6AD The SSM09N90GW is in a TO-247 (TO-3P) package,Pb-free; RoHS-compli
ssm09n90cgw.pdf
SSM09N90CGWN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM09N90CGW acheives fast switching performanceBVDSS 900Vwith low gate charge without a complex drive circuit. It isRDS(ON) 1.4suitable for high voltage applications such as AC/DCconverters and offline power supplies.I 7.6AD The SSM09N90CGW is in a TO-247 (TO-3P) package,Pb-free; RoHS-com
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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