SSM20P02GH Datasheet and Replacement
Type Designator: SSM20P02GH
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 31.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 410 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: TO-252
SSM20P02GH substitution
SSM20P02GH Datasheet (PDF)
ssm20p02gh ssm20p02gj.pdf

SSM20P02H,JP-CHANNEL ENHANCEMENT-MODEPOWER MOSFETSimple drive requirement D BVDSS -20V2.5V gate drive capability RDS(ON) 52m Fast switching ID -18AGSDescriptionPower MOSFETs from Silicon Standard provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device design, low on-resistance and cost-effectiveness.The TO-252 package is wi
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SSM2030GMN- and P-channel Enhancement-mode Power MOSFETsN-CH BVDSS 20VSimple drive requirement D2D2D2 RDS(ON) 30mLower gate charge D1D1D1D1ID 6AFast switching characteristicsG2G2P-CH BVDSS -20VPb-free; RoHS compliant. S2S2 G1SO-8 S1G1RDS(ON) 50mS1 DESCRIPTIONID -5AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer wit
Datasheet: SSM04N70BGP-A , SSM09N70GP-A , SSM09N90CGW , SSM09N90GW , SSM1333GU , SSM2030GM , SSM2030SD , SSM20N03S , 20N50 , SSM20P02GJ , SSM2301GN , SSM2302GN , SSM2303GN , SSM2304AGN , SSM2304GN , SSM2305AGN , SSM2305GN .
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