SSM20P02GH Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SSM20P02GH
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 31.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 0.5 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tj ⓘ - Максимальная температура канала: 150 °C
Qg ⓘ - Общий заряд затвора: 13.5 nC
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 410 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.052 Ohm
Тип корпуса: TO-252
Аналог (замена) для SSM20P02GH
SSM20P02GH Datasheet (PDF)
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SSM20P02H,JP-CHANNEL ENHANCEMENT-MODEPOWER MOSFETSimple drive requirement D BVDSS -20V2.5V gate drive capability RDS(ON) 52m Fast switching ID -18AGSDescriptionPower MOSFETs from Silicon Standard provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device design, low on-resistance and cost-effectiveness.The TO-252 package is wi
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