All MOSFET. SSM2310GN Equivalents Search

 

SSM2310GN Spec and Replacement


   Type Designator: SSM2310GN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOT-23-3

 SSM2310GN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM2310GN Specs

 ..1. Size:499K  silicon standard
ssm2310gn.pdf pdf_icon

SSM2310GN

SSM2310GN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM2310GN acheives fast switching performance BVDSS 60V with low gate charge without a complex drive circuit. It RDS(ON) 90m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 3A D The SSM2310GN is supplied in an RoHS-compliant Pb-free; RoHS-com... See More ⇒

 8.1. Size:310K  silicon standard
ssm2312gn.pdf pdf_icon

SSM2310GN

SSM2312GN N-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS 20V D Simple drive requirement R 50m DS(ON) Fast switching ID 4.3A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2312GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such as DC... See More ⇒

 8.2. Size:313K  silicon standard
ssm2313gn.pdf pdf_icon

SSM2310GN

SSM2313GN P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -20V D Simple drive requirement R 120m DS(ON) Fast switching ID -2.5A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2313GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such as... See More ⇒

 8.3. Size:498K  silicon standard
ssm2316gn.pdf pdf_icon

SSM2310GN

SSM2316GN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM2316GN acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It RDS(ON) 42m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 4.7A D The SSM2316GN is supplied in an RoHS-compliant Pb-free; RoHS-c... See More ⇒

Detailed specifications: SSM2303GN , SSM2304AGN , SSM2304GN , SSM2305AGN , SSM2305GN , SSM2306GN , SSM2307GN , SSM2309GN , SI2302 , SSM2312GN , SSM2313GN , SSM2314GN , SSM2316GN , SSM2318GEN , SSM25T03GH , SSM25T03GJ , SSM2602GY .

Keywords - SSM2310GN MOSFET specs

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