Справочник MOSFET. SSM2310GN

 

SSM2310GN Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSM2310GN
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.38 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 55 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
   Тип корпуса: SOT-23-3
     - подбор MOSFET транзистора по параметрам

 

SSM2310GN Datasheet (PDF)

 ..1. Size:499K  silicon standard
 ssm2310gn.pdf pdf_icon

SSM2310GN

SSM2310GNN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM2310GN acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 90mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 3AD The SSM2310GN is supplied in an RoHS-compliantPb-free; RoHS-com

 8.1. Size:310K  silicon standard
 ssm2312gn.pdf pdf_icon

SSM2310GN

SSM2312GNN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 20VDSimple drive requirement R 50mDS(ON)Fast switching ID 4.3AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2312GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as DC

 8.2. Size:313K  silicon standard
 ssm2313gn.pdf pdf_icon

SSM2310GN

SSM2313GNP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -20VDSimple drive requirement R 120mDS(ON)Fast switching ID -2.5AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2313GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as

 8.3. Size:498K  silicon standard
 ssm2316gn.pdf pdf_icon

SSM2310GN

SSM2316GNN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM2316GN acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 42mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 4.7AD The SSM2316GN is supplied in an RoHS-compliantPb-free; RoHS-c

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SSM2303GN , SSM2304AGN , SSM2304GN , SSM2305AGN , SSM2305GN , SSM2306GN , SSM2307GN , SSM2309GN , IRFZ46N , SSM2312GN , SSM2313GN , SSM2314GN , SSM2316GN , SSM2318GEN , SSM25T03GH , SSM25T03GJ , SSM2602GY .

History: NVTFS002N04C | SI9945BDY

 

 
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