SSM25T03GH Datasheet. Specs and Replacement

Type Designator: SSM25T03GH  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO-252

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SSM25T03GH datasheet

 ..1. Size:744K  silicon standard
 ssm25t03gh ssm25t03gj.pdf pdf_icon

SSM25T03GH

SSM25T03GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM25T03 acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It is RDS(ON) 35m suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 20A D The SSM25T03GH is in a TO-252 package, which is Pb-free; RoHS... See More ⇒

Detailed specifications: SSM2307GN, SSM2309GN, SSM2310GN, SSM2312GN, SSM2313GN, SSM2314GN, SSM2316GN, SSM2318GEN, STF13NM60N, SSM25T03GJ, SSM2602GY, SSM2602Y, SSM2603GY, SSM2603Y, SSM2605GY, SSM2761P-A, SSM3310GH

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.