SSM2603Y Datasheet. Specs and Replacement

Type Designator: SSM2603Y  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.6 nS

Cossⓘ - Output Capacitance: 167 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm

Package: SOT-26

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SSM2603Y datasheet

 ..1. Size:152K  silicon standard
 ssm2603y.pdf pdf_icon

SSM2603Y

SSM2603Y P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BVDSS -20V S D Small package outline R 65m DS(ON) D Surface-mount device ID - 4.2A G D SOT-26 D Description D These power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device. G The SOT-2... See More ⇒

 7.1. Size:215K  silicon standard
 ssm2603gy.pdf pdf_icon

SSM2603Y

SSM2603GY P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY S BVDSS -20V Simple Drive Requirement D D RDS(ON) 65m Small Package Outline Surface Mount Device G ID -5.0A D SOT-26 D DESCRIPTION D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. G The ... See More ⇒

 8.1. Size:207K  silicon standard
 ssm2605gy.pdf pdf_icon

SSM2603Y

SSM2605GY P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY S Fast Switching Characteristic BVDSS -30V D Lower Gate Charge D RDS(ON) 80m Small Footprint & Low Profile Package G ID - 4A D SOT-26 D DESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques D to achieve the lowest possible on-resistance, extremely efficient and ost-effectiveness d... See More ⇒

 8.2. Size:204K  silicon standard
 ssm2602gy.pdf pdf_icon

SSM2603Y

SSM2602GY N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Capable of 2.5V gate drive BVDSS 20V S Lower on-resistance D RDS(ON) 34m D Surface mount package ID 6.3A RoHS Compliant G D SOT-26 D DESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques D to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness ... See More ⇒

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Detailed specifications: SSM2314GN, SSM2316GN, SSM2318GEN, SSM25T03GH, SSM25T03GJ, SSM2602GY, SSM2602Y, SSM2603GY, 75N75, SSM2605GY, SSM2761P-A, SSM3310GH, SSM3310GJ, SSM3J331R, SSM3J338R, SSM3K2615R, SSM3K318R

Keywords - SSM2603Y MOSFET specs

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