SSM2603Y MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSM2603Y
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.56 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.2 V
Максимально допустимый постоянный ток стока |Id|: 4.2 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 10.6 nC
Время нарастания (tr): 3.6 ns
Выходная емкость (Cd): 167 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.053 Ohm
Тип корпуса: SOT-26
SSM2603Y Datasheet (PDF)
ssm2603y.pdf
SSM2603YP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BVDSS -20VSDSmall package outline R 65mDS(ON)DSurface-mount device ID - 4.2AGDSOT-26DDescriptionDThese power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistancein an extremely efficient and cost-effective device.GThe SOT-2
ssm2603gy.pdf
SSM2603GYP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY SBVDSS -20VSimple Drive Requirement DDRDS(ON) 65mSmall Package Outline Surface Mount Device GID -5.0ADSOT-26 DDESCRIPTION DAdvanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. GThe
ssm2605gy.pdf
SSM2605GYP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY SFast Switching Characteristic BVDSS -30VDLower Gate Charge D RDS(ON) 80mSmall Footprint & Low Profile Package G ID - 4ADSOT-26DDESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques Dto achieve the lowest possible on-resistance, extremely efficient and ost-effectiveness d
ssm2602gy.pdf
SSM2602GYN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY Capable of 2.5V gate drive BVDSS 20VSLower on-resistance DRDS(ON) 34mDSurface mount package ID 6.3ARoHS Compliant GDSOT-26 DDESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques Dto achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness
ssm2602y.pdf
SSM2602YN-CHANNEL ENHANCEMENT-MODE POWER MOSFETCapable of 2.5V gate drive BVDSS 20VSDLow on-resistance RDS(ON) 34mDSurface mount package ID 5.3AGDSOT-26DDescriptionThese Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistanceDin an extremely efficient and cost-effective device.The SOT-26 package
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
