SSM3J338R Datasheet: MOSFET, P-Ch, 12V, 6A. Full specification with pinout and replacement list

SSM3J338R Datasheet. Specs and Replacement

Type Designator: SSM3J338R 📄📄

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0176 Ohm

Package: SOT23

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SSM3J338R datasheet

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SSM3J338R MOSFETs Silicon P-Channel MOS SSM3J338R SSM3J338R SSM3J338R SSM3J338R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 26.3 m (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 m (typ.) (@VGS = -2.5 V) R... See More ⇒

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SSM3J334R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J334R Power Management Switch Applications Unit mm Low ON-resistance R = 71 m (max) (@V = -10 V) DS(ON) GS R = 105 m (max) (@V = -4.5 V) DS(ON) GS R = 136 m (max) (@V = -4.0 V) DS(ON) GS Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-Source v... See More ⇒

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SSM3J331R MOSFETs Silicon P-Channel MOS (U-MOS ) SSM3J331R SSM3J331R SSM3J331R SSM3J331R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 150 m (max) (@VGS = -1.5 V) RDS(ON) = 100 m (max) (@VGS = -1.8... See More ⇒