SSM3J338RMOSFETs Silicon P-Channel MOSSSM3J338RSSM3J338RSSM3J338RSSM3J338R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.8 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 26.3 m (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 m (typ.) (@VGS = -2.5 V) R

SSM3J334R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J334R Power Management Switch Applications Unit: mm Low ON-resistance: R = 71 m (max) (@V = -10 V) DS(ON) GS R = 105 m (max) (@V = -4.5 V) DS(ON) GS R = 136 m (max) (@V = -4.0 V) DS(ON) GSAbsolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source v

SSM3J331RMOSFETs Silicon P-Channel MOS (U-MOS)SSM3J331RSSM3J331RSSM3J331RSSM3J331R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 150 m (max) (@VGS = -1.5 V) RDS(ON) = 100 m (max) (@VGS = -1.8

SSM3J332R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J332R Power Management Switch Applications Unit: mm +0.080.42+0.08-0.050.17 1.8-V drive 0.05M A -0.073 Low ON-resistance: R = 144 m (max) (@V = -1.8 V) DS(ON) GS R = 72.0 m (max) (@V = -2.5 V) DS(ON) GS R = 50.0 m (max) (@V = -4.5 V) DS(ON) GS R = 42.0 m (m

SSM3J332Rwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2