All MOSFET. SSM3K56CT Datasheet

 

SSM3K56CT Datasheet and Replacement


   Type Designator: SSM3K56CT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.235 Ohm
   Package: SOT-883
 

 SSM3K56CT substitution

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SSM3K56CT Datasheet (PDF)

 ..1. Size:203K  toshiba
ssm3k56ct.pdf pdf_icon

SSM3K56CT

SSM3K56CTMOSFETs Silicon N-Channel MOSSSM3K56CTSSM3K56CTSSM3K56CTSSM3K56CT1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON) = 48

 7.1. Size:197K  toshiba
ssm3k56mfv.pdf pdf_icon

SSM3K56CT

SSM3K56MFVMOSFETs Silicon N-Channel MOSSSM3K56MFVSSM3K56MFVSSM3K56MFVSSM3K56MFV1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON)

 7.2. Size:198K  toshiba
ssm3k56fs.pdf pdf_icon

SSM3K56CT

SSM3K56FSMOSFETs Silicon N-Channel MOSSSM3K56FSSSM3K56FSSSM3K56FSSSM3K56FS1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON) = 48

 7.3. Size:208K  toshiba
ssm3k56act.pdf pdf_icon

SSM3K56CT

SSM3K56ACTMOSFETs Silicon N-Channel MOSSSM3K56ACTSSM3K56ACTSSM3K56ACTSSM3K56ACT1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON)

Datasheet: SSM3K2615R , SSM3K318R , SSM3K324R , SSM3K335R , SSM3K336R , SSM3K337R , SSM3K339R , SSM3K35CTC , MMD60R360PRH , SSM3K56FS , SSM3K56MFV , SSM3K59CTB , SSM3K72CTC , SSM40P03GH , SSM40P03GJ , SSM40T03GH , SSM40T03GJ .

History: IXTJ3N150 | AUIRFP4227 | VBZE04N03

Keywords - SSM3K56CT MOSFET datasheet

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