IRLML2803 Datasheet: MOSFET, N-Ch, 30V, 1.2A. Full specification with pinout and replacement list

IRLML2803 Datasheet. Specs and Replacement

Type Designator: IRLML2803 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: SOT23

📄📄 Copy

IRLML2803 substitution

- MOSFET ⓘ Cross-Reference Search

IRLML2803 datasheet

..1. Size:252K international rectifier
irlml2803pbf.pdf pdf_icon

IRLML2803PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 30V l Low Profile (... See More ⇒

..2. Size:100K international rectifier
irlml2803.pdf pdf_icon

PD - 9.1258C IRLML2803 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance N-Channel MOSFET VDSS = 30V SOT-23 Footprint Low Profile (... See More ⇒

..3. Size:738K cn shikues
irlml2803.pdf pdf_icon

IRLML2803 SOT-23 Plastic-Encapsulate Transistors MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 V ID Drain current 2.0 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARAC... See More ⇒

0.1. Size:221K international rectifier
irlml2803gpbf.pdf pdf_icon

PD - 96164A IRLML2803GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET G 1 VDSS = 30V l SOT-23 Footprint 3 D l Low Profile (... See More ⇒