SSM4226GM
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM4226GM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 8.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 20
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 320
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018
Ohm
Package:
SO-8
SSM4226GM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM4226GM
Datasheet (PDF)
..1. Size:142K silicon standard
ssm4226gm.pdf
SSM4226M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BVDSS 30VD2D2D1Simple drive requirement R 18mDS(ON)D1High V rating ID 8.2AGSG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2G1ruggedized device design, ultra low on-resistance andcost
8.1. Size:133K silicon standard
ssm4224m.pdf
SSM4224MDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BVDSS 30VD2D2Simple drive requirement R 14mDS(ON)D1D1Dual N-MOSFET package ID 10AG2S2G1SO-8S1DescriptionAdvanced power MOSFETs from Silicon Standard provide theD2D1designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effecti
8.2. Size:155K silicon standard
ssm4228gm.pdf
SSM4228M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSLow on-resistance BVDSS 30VD2D2High Vgs rating D1 RDS(ON) 25mD1Surface-mount package ID 6.8AG2S2G1SO-8S1DescriptionD2D1Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2G1ruggedized device design, ultra low on-resistance andcost-effectiveness.
9.1. Size:201K silicon standard
ssm4232gm.pdf
SSM4232GMN-CHANNEL ENHANCEMENT MODE POWER MOSFETPRODUCT SUMMARY D2BVDSS 30VD2Low On-Resistance D1D1 RDS(ON) 22mSimple Drive Requirement ID 7.8AG2Dual N MOSFET Package S2G1SO-8S1DESCRIPTION D2D1The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast G2switching, ruggedized device design, ultra
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