IRLML6302 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLML6302
SMD Transistor Code: 1C
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 0.54 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Drain Current |Id|: 0.62 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm
Package: SOT23
IRLML6302 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLML6302 Datasheet (PDF)
1.1. irlml6302gpbf.pdf 
Size:243K _international_rectifier
PD - 96159 IRLML6302GPbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET VDSS = -20V l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel RDS(on) = 0.60Ω l Fast Switching l Lead-Free l Halogen-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve e
1.2. irlml6302.pdf Size:100K _international_rectifier
PD - 9.1259D IRLML6302 HEXFET® Power MOSFET Generation V Technology D Ultra Low On-Resistance P-Channel MOSFET VDSS = -20V SOT-23 Footprint Low Profile (<1.1mm) G Available in Tape and Reel RDS(on) = 0.60? Fast Switching S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silic
1.3. irlml6302pbf.pdf Size:240K _international_rectifier
IRLML6302PbF l Generation V Technology HEXFET® Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET G 1 l SOT-23 Footprint VDSS = -20V l Low Profile (<1.1mm) 3 D l Available in Tape and Reel l Fast Switching S 2 l Lead-Free RDS(on) = 0.60Ω l RoHS Compliant, Halogen-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique
1.4. irlml6302pbf-1.pdf Size:236K _international_rectifier
IRLML6302PbF-1 HEXFET® Power MOSFET VDS -20 V RDS(on) max 0.60 Ω G 1 (@V = -4.5V) GS Qg (typical) 2.4 nC 3 D ID -0.78 A (@T = 25°C) A S 2 Micro3TM Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, In
1.5. irlml6302.pdf Size:146K _tysemi
Product specification IRLML6302PbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET VDSS = -20V l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel RDS(on) = 0.60Ω l Fast Switching l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme
Datasheet: IRLM110A , IRLM120A , IRLM210A , IRLM220A , IRLML2402 , IRLML2502 , IRLML2803 , IRLML5103 , 2SK2996 , IRLML6401 , IRLML6402 , IRLMS1503 , IRLMS1902 , IRLMS2002 , IRLMS4502 , IRLMS5703 , IRLMS6702 .
