IRLML6302 Datasheet. Specs and Replacement

Type Designator: IRLML6302  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.78 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 53 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: SOT23

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IRLML6302 datasheet

 ..1. Size:300K  international rectifier
 irlml6302pbf.pdf pdf_icon

IRLML6302

PD - 94947B IRLML6302PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET VDSS = -20V l SOT-23 Footprint l Low Profile (... See More ⇒

 ..2. Size:100K  international rectifier
 irlml6302.pdf pdf_icon

IRLML6302

PD - 9.1259D IRLML6302 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance P-Channel MOSFET VDSS = -20V SOT-23 Footprint Low Profile (... See More ⇒

 ..3. Size:146K  tysemi
 irlml6302.pdf pdf_icon

IRLML6302

Product specification IRLML6302PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET VDSS = -20V l SOT-23 Footprint l Low Profile (... See More ⇒

 ..4. Size:273K  inchange semiconductor
 irlml6302.pdf pdf_icon

IRLML6302

Isc P-Channel MOSFET Transistor IRLML6302 FEATURES With SOT-23 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage -2... See More ⇒

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Detailed specifications: IRLM110A, IRLM120A, IRLM210A, IRLM220A, IRLML2402, IRLML2502, IRLML2803, IRLML5103, K4145, IRLML6401, IRLML6402, IRLMS1503, IRLMS1902, IRLMS2002, IRLMS4502, IRLMS5703, IRLMS6702

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