All MOSFET. IRLML6302 Datasheet

 

IRLML6302 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRLML6302

SMD Transistor Code: 1C

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.54 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Drain Current |Id|: 0.62 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: SOT23

IRLML6302 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLML6302 Datasheet (PDF)

1.1. irlml6302gpbf.pdf Size:243K _international_rectifier

IRLML6302
IRLML6302

PD - 96159 IRLML6302GPbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET VDSS = -20V l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel RDS(on) = 0.60Ω l Fast Switching l Lead-Free l Halogen-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve e

1.2. irlml6302.pdf Size:100K _international_rectifier

IRLML6302
IRLML6302

PD - 9.1259D IRLML6302 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance P-Channel MOSFET VDSS = -20V SOT-23 Footprint Low Profile (<1.1mm) G Available in Tape and Reel RDS(on) = 0.60? Fast Switching S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silic

 1.3. irlml6302pbf.pdf Size:240K _international_rectifier

IRLML6302
IRLML6302

IRLML6302PbF l Generation V Technology HEXFET® Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET G 1 l SOT-23 Footprint VDSS = -20V l Low Profile (<1.1mm) 3 D l Available in Tape and Reel l Fast Switching S 2 l Lead-Free RDS(on) = 0.60Ω l RoHS Compliant, Halogen-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

1.4. irlml6302pbf-1.pdf Size:236K _international_rectifier

IRLML6302
IRLML6302

IRLML6302PbF-1 HEXFET® Power MOSFET VDS -20 V RDS(on) max 0.60 Ω G 1 (@V = -4.5V) GS Qg (typical) 2.4 nC 3 D ID -0.78 A (@T = 25°C) A S 2 Micro3TM Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, In

 1.5. irlml6302.pdf Size:146K _tysemi

IRLML6302
IRLML6302

Product specification IRLML6302PbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET VDSS = -20V l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel RDS(on) = 0.60Ω l Fast Switching l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

Datasheet: IRLM110A , IRLM120A , IRLM210A , IRLM220A , IRLML2402 , IRLML2502 , IRLML2803 , IRLML5103 , 2SK2996 , IRLML6401 , IRLML6402 , IRLMS1503 , IRLMS1902 , IRLMS2002 , IRLMS4502 , IRLMS5703 , IRLMS6702 .

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