All MOSFET. IRLML6302 Datasheet

 

IRLML6302 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRLML6302

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.54 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 2.7 V

Maximum Drain Current |Id|: 0.62 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: SOT23

IRLML6302 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRLML6302 Datasheet (PDF)

1.1. irlml6302.pdf Size:100K _international_rectifier

IRLML6302
IRLML6302

PD - 9.1259D IRLML6302 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance P-Channel MOSFET VDSS = -20V SOT-23 Footprint Low Profile (<1.1mm) G Available in Tape and Reel RDS(on) = 0.60? Fast Switching S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silic

1.2. irlml6302.pdf Size:146K _tysemi

IRLML6302
IRLML6302

Product specification IRLML6302PbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET VDSS = -20V l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel RDS(on) = 0.60Ω l Fast Switching l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

3.1. irlml6344pbf.pdf Size:221K _international_rectifier

IRLML6302
IRLML6302

IRLML6344TRPbF HEXFET® Power MOSFET VDS 30 V G 1 VGS Max ± 12 V RDS(on) max 3 D 29 mΩ (@VGS = 4.5V) S 2 Micro3TM (SOT-23) RDS(on) max 37 mΩ IRLML6344TRPbF (@VGS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Benefits Low RDSon (<29mΩ) Lower Conduction Losses Industry-standard SOT-23 Package Multi-vendor compatibility RoHS compliant containing n

3.2. irlml6346pbf.pdf Size:230K _international_rectifier

IRLML6302
IRLML6302

PD - 97584A IRLML6346TRPbF HEXFET® Power MOSFET VDS 30 V VGS Max ± 12 V RDS(on) max 63 m (@VGS = 4.5V) RDS(on) max Micro3TM (SOT-23) 80 m IRLML6346TRPbF (@VGS = 2.5V) Application(s) Load/ System Switch Features and Benefits Features Benefits Industry-standard SOT-23 Package results in Multi-vendor compatibility RoHS compliant containing no lead, no bromide an

3.3. irlml6344.pdf Size:145K _tysemi

IRLML6302
IRLML6302

Product specification IRLML6344TRPbF HEXFET® Power MOSFET VDS 30 V G 1 VGS Max ± 12 V RDS(on) max 3 D 29 mΩ (@VGS = 4.5V) S 2 Micro3TM (SOT-23) RDS(on) max 37 mΩ IRLML6344TRPbF (@VGS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Benefits Low RDSon (<29mΩ) Lower Conduction Losses Industry-standard SOT-23 Package Multi-vendor compatibility RoHS

3.4. irlml6346trpbf.pdf Size:127K _tysemi

IRLML6302
IRLML6302

Product specification IRLML6346TRPbF HEXFET® Power MOSFET VDS 30 V VGS Max ± 12 V RDS(on) max 63 m (@VGS = 4.5V) RDS(on) max Micro3TM (SOT-23) 80 m IRLML6346TRPbF (@VGS = 2.5V) Application(s) Load/ System Switch Features and Benefits Features Benefits Industry-standard SOT-23 Package results in Multi-vendor compatibility RoHS compliant containing no lead, no

Datasheet: IRLM110A , IRLM120A , IRLM210A , IRLM220A , IRLML2402 , IRLML2502 , IRLML2803 , IRLML5103 , 2SK2996 , IRLML6401 , IRLML6402 , IRLMS1503 , IRLMS1902 , IRLMS2002 , IRLMS4502 , IRLMS5703 , IRLMS6702 .

 


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