All MOSFET. SSM4953M Equivalents Search

SSM4953M P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BVDSS -30V D2 D2 Low on-resistance RDS(ON) 53m D1 D1 Fast switching I -5A D G2 S2 G1 SO-8 S1 D2 Description D1 MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, G2 G1 ruggedized device design, low on-resistance and cost- effectiveness. S2 S1 ... See More ⇒

SSM4957(G)M DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV -30V DSS D2 D2 Lower gate charge R 24m DS(ON) D1 D1 Fast switching characteristics ID -7.7A G2 S2 G1 SO-8 S1 D2 D1 Description Advanced Power MOSFETs from Silicon Standard provide the G2 G1 designer with the best combination of fast switching, ruggedized device design, low on-resistan... See More ⇒

SSM4955GM Dual P-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM4955GM acheives fast switching performance BVDSS -20V with low gate charge without a complex drive circuit. It RDS(ON) 45m is suitable for low voltage applications such as battery management and general load-switching circuits. I -5.6A D The SSM4955GM is supplied in an RoHS-compliant Pb-fr... See More ⇒

SSM4924GM Dual N-channel Enhancement-mode Power MOSFETs Simple drive requirement BV BVDSS 20V D2 D2 D1 Lower gate charge R RDS(ON) 35m D1 Fast switching characteristics I 6A ID G2 S2 Pb-free; RoHS compliant. G1 SO-8 S1 DESCRIPTION D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device desig... See More ⇒

SSM4920M N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple Drive Requirement BV 25V DSS D2 D2 Low On-resistance R 25m D1 DS(ON) D1 Fast Switching I 7A D G2 S2 G1 SO-8 S1 Description D2 D1 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G2 ruggedized device design, low on-resistance and cost- G1 effectiveness. S1 S2 ... See More ⇒