Справочник MOSFET. SSM4953M

 

SSM4953M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM4953M
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 20 nC
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 425 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.053 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для SSM4953M

 

 

SSM4953M Datasheet (PDF)

 ..1. Size:109K  silicon standard
 ssm4953m.pdf

SSM4953M SSM4953M

SSM4953MP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BVDSS -30VD2D2Low on-resistance RDS(ON) 53m D1D1Fast switching I -5ADG2S2G1SO-8S1D2Description D1MOSFETs from Silicon Standard Corp. provide thedesigner with the best combination of fast switching,G2G1ruggedized device design, low on-resistance and cost-effectiveness.S2S1

 8.1. Size:228K  silicon standard
 ssm4957m.pdf

SSM4953M SSM4953M

SSM4957(G)MDUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV -30VDSSD2D2Lower gate charge R 24mDS(ON)D1D1Fast switching characteristics ID -7.7AG2S2G1SO-8S1D2D1DescriptionAdvanced Power MOSFETs from Silicon Standard provide theG2G1designer with the best combination of fast switching,ruggedized device design, low on-resistan

 8.2. Size:515K  silicon standard
 ssm4955gm.pdf

SSM4953M SSM4953M

SSM4955GMDual P-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM4955GM acheives fast switching performanceBVDSS -20Vwith low gate charge without a complex drive circuit. ItRDS(ON) 45mis suitable for low voltage applications such as batterymanagement and general load-switching circuits.I -5.6AD The SSM4955GM is supplied in an RoHS-compliantPb-fr

 9.1. Size:310K  silicon standard
 ssm4924gm.pdf

SSM4953M SSM4953M

SSM4924GMDual N-channel Enhancement-mode Power MOSFETs Simple drive requirement BV BVDSS 20VD2D2D1Lower gate charge R RDS(ON) 35mD1Fast switching characteristicsI 6AIDG2S2Pb-free; RoHS compliant.G1SO-8S1DESCRIPTIOND2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, ruggedizeddevice desig

 9.2. Size:153K  silicon standard
 ssm4920m.pdf

SSM4953M SSM4953M

SSM4920MN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETSimple Drive Requirement BV 25VDSSD2 D2Low On-resistance R 25mD1 DS(ON)D1Fast Switching I 7ADG2S2G1SO-8S1DescriptionD2D1Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2ruggedized device design, low on-resistance and cost- G1effectiveness.S1S2

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