SSM4955GM Datasheet. Specs and Replacement

Type Designator: SSM4955GM  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SO-8

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SSM4955GM datasheet

 ..1. Size:515K  silicon standard
 ssm4955gm.pdf pdf_icon

SSM4955GM

SSM4955GM Dual P-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM4955GM acheives fast switching performance BVDSS -20V with low gate charge without a complex drive circuit. It RDS(ON) 45m is suitable for low voltage applications such as battery management and general load-switching circuits. I -5.6A D The SSM4955GM is supplied in an RoHS-compliant Pb-fr... See More ⇒

 8.1. Size:228K  silicon standard
 ssm4957m.pdf pdf_icon

SSM4955GM

SSM4957(G)M DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV -30V DSS D2 D2 Lower gate charge R 24m DS(ON) D1 D1 Fast switching characteristics ID -7.7A G2 S2 G1 SO-8 S1 D2 D1 Description Advanced Power MOSFETs from Silicon Standard provide the G2 G1 designer with the best combination of fast switching, ruggedized device design, low on-resistan... See More ⇒

 8.2. Size:109K  silicon standard
 ssm4953m.pdf pdf_icon

SSM4955GM

SSM4953M P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BVDSS -30V D2 D2 Low on-resistance RDS(ON) 53m D1 D1 Fast switching I -5A D G2 S2 G1 SO-8 S1 D2 Description D1 MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, G2 G1 ruggedized device design, low on-resistance and cost- effectiveness. S2 S1 ... See More ⇒

 9.1. Size:310K  silicon standard
 ssm4924gm.pdf pdf_icon

SSM4955GM

SSM4924GM Dual N-channel Enhancement-mode Power MOSFETs Simple drive requirement BV BVDSS 20V D2 D2 D1 Lower gate charge R RDS(ON) 35m D1 Fast switching characteristics I 6A ID G2 S2 Pb-free; RoHS compliant. G1 SO-8 S1 DESCRIPTION D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device desig... See More ⇒

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Detailed specifications: SSM4575M, SSM4800AGM, SSM4816SM, SSM4835M, SSM4880AGM, SSM4920M, SSM4924GM, SSM4953M, AON7408, SSM4957M, SSM5G02TU, SSM5G04TU, IRF9530NPBF, IRF9530NSPBF, IRF9530PBF, IRF9530S, IRF9530SMD

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