All MOSFET. IRLMS1503 Datasheet

 

IRLMS1503 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLMS1503
   Marking Code: 2B*_B*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1(min) V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.4 nC
   trⓘ - Rise Time: 4.4 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: MICRO6

 IRLMS1503 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLMS1503 Datasheet (PDF)

 ..1. Size:150K  international rectifier
 irlms1503pbf.pdf

IRLMS1503 IRLMS1503

PD - 95762IRLMS1503PbFHEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = 30Vl Ultra Low RDS(on)25DDl N-Channel MOSFETl Lead-Free3 4G SRDS(on) = 0.10DescriptionTop ViewFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistanceper

 ..2. Size:108K  international rectifier
 irlms1503.pdf

IRLMS1503 IRLMS1503

PD - 9.1508CIRLMS1503HEXFET Power MOSFET Generation V Technology Micro6 Package StyleVDSS = 30V Ultra Low Rds(on) N-Channel MOSFETRDS(on) = 0.10DescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andrugged

 0.1. Size:192K  international rectifier
 irlms1503pbf-1.pdf

IRLMS1503 IRLMS1503

IRLMS1503PbF-1HEXFET Power MOSFETVDS 30 VA1 6D DRDS(on) max 0.10(@V = 10V)GS25DDRDS(on) max 0.20(@V = 4.5V)GS3 4G SQg (typical) 6.4 nCMicro6ID Top View3.2 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout Micro-6 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier Manufacturing

 8.1. Size:108K  international rectifier
 irlms1902.pdf

IRLMS1503 IRLMS1503

PD - 9.1540BIRLMS1902HEXFET Power MOSFET Generation V Technology Micro6 Package StyleVDSS = 20V Ultra Low Rds(on) N-Channel MOSFETRDS(on) = 0.10DescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andrugged

 8.2. Size:191K  international rectifier
 irlms1902trpbf.pdf

IRLMS1503 IRLMS1503

PD - 95359IRLMS1902PbFHEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = 20Vl Ultra Low RDS(on)25DDl N-Channel MOSFETl Lead-Free3 4G SRDS(on) = 0.10DescriptionTop ViewFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per

 8.3. Size:184K  international rectifier
 irlms1902tr.pdf

IRLMS1503 IRLMS1503

PD - 91540CIRLMS1902HEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = 20Vl Ultra Low RDS(on)25DDl N-Channel MOSFET3 4G SRDS(on) = 0.10DescriptionTop ViewFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance persilicon area. T

Datasheet: IRLM220A , IRLML2402 , IRLML2502 , IRLML2803 , IRLML5103 , IRLML6302 , IRLML6401 , IRLML6402 , CS150N03A8 , IRLMS1902 , IRLMS2002 , IRLMS4502 , IRLMS5703 , IRLMS6702 , IRLMS6802 , IRLR010 , IRLR014 .

 

 
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