IRF9630PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF9630PBF
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 74
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 6.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 29
nC
trⓘ - Rise Time: 27
nS
Cossⓘ -
Output Capacitance: 200
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8
Ohm
Package:
TO-220AB
IRF9630PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF9630PBF
Datasheet (PDF)
..1. Size:2142K international rectifier
irf9630pbf.pdf 
PD - 94958IRF9630PbF Lead-Free01/29/04Document Number: 91084 www.vishay.com1IRF9630PbFDocument Number: 91084 www.vishay.com2IRF9630PbFDocument Number: 91084 www.vishay.com3IRF9630PbFDocument Number: 91084 www.vishay.com4IRF9630PbFDocument Number: 91084 www.vishay.com5IRF9630PbFDocument Number: 91084 www.vishay.com6IRF9630PbFTO-220AB Package O
..2. Size:197K vishay
irf9630pbf sihf9630.pdf
IRF9630, SiHF9630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) (Max.) ()VGS = - 10 V 0.80RoHS* P-ChannelQg (Max.) (nC) 29COMPLIANT Fast SwitchingQgs (nC) 5.4 Ease of ParallelingQgd (nC) 15 Simple Drive RequirementsConfiguration Single Compliant to RoH
7.1. Size:1045K international rectifier
irf9630spbf.pdf
PD- 95771IRF9630SPbF Lead-Free06/06/05Document Number: 91085 www.vishay.com1IRF9630SPbFDocument Number: 91085 www.vishay.com2IRF9630SPbFDocument Number: 91085 www.vishay.com3IRF9630SPbFDocument Number: 91085 www.vishay.com4IRF9630SPbFDocument Number: 91085 www.vishay.com5IRF9630SPbFDocument Number: 91085 www.vishay.com6IRF9630SPbFPeak Diode R
7.4. Size:103K fairchild semi
irf9630 rf1s9630sm.pdf
IRF9630, RF1S9630SMData Sheet January 20026.5A, 200V, 0.800 Ohm, P-Channel Power FeaturesMOSFETs 6.5A, 200VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown a
7.7. Size:197K vishay
irf9630 sihf9630.pdf
IRF9630, SiHF9630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) (Max.) ()VGS = - 10 V 0.80RoHS* P-ChannelQg (Max.) (nC) 29COMPLIANT Fast SwitchingQgs (nC) 5.4 Ease of ParallelingQgd (nC) 15 Simple Drive RequirementsConfiguration Single Compliant to RoH
7.8. Size:172K vishay
irf9630spbf sihf9630s.pdf
IRF9630S, SiHF9630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface MountRDS(on) ()VGS = - 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 29 Dynamic dV/dt RatingQgs (nC) 5.4 Repetitive Avalanche Rated P-ChannelQgd (nC) 15 Fast SwitchingConfiguration Single
7.9. Size:171K vishay
irf9630s sihf9630s.pdf
IRF9630S, SiHF9630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface MountRDS(on) ()VGS = - 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 29 Dynamic dV/dt RatingQgs (nC) 5.4 Repetitive Avalanche Rated P-ChannelQgd (nC) 15 Fast SwitchingConfiguration Single
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