IRF9Z10PBF Datasheet and Replacement
Type Designator: IRF9Z10PBF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-220AB
IRF9Z10PBF substitution
IRF9Z10PBF Datasheet (PDF)
irf9z10pbf.pdf
IRF9Z10, SiHF9Z10Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelQg (Max.) (nC) 12COMPLIANT 175 C Operating TemperatureQgs (nC) 3.8 Fast SwitchingQgd (nC) 5.1 Ease of ParallelingConfiguration Single Simple Drive Requi
irf9z10.pdf
PD - 90459AIRF9Z10DSDGTO-220ABGDSGate Drain Source06/24/05Document Number: 90118 www.vishay.com1IRF9Z10Document Number: 90118 www.vishay.com2IRF9Z10Document Number: 90118 www.vishay.com3IRF9Z10Document Number: 90118 www.vishay.com4IRF9Z10Document Number: 90118 www.vishay.com5IRF9Z10Document Number: 90118 www.vishay.com6IRF9Z10Peak Di
irf9z10 sihf9z10.pdf
IRF9Z10, SiHF9Z10Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelQg (Max.) (nC) 12COMPLIANT 175 C Operating TemperatureQgs (nC) 3.8 Fast SwitchingQgd (nC) 5.1 Ease of ParallelingConfiguration Single Simple Drive Requi
Datasheet: IRF9630PBF , IRF9630SPBF , IRF9640L , IRF9640LPBF , IRF9640PBF , IRF9640SPBF , IRF9910PBF-1 , IRF9952QPBF , 18N50 , IRF9Z14L , IRF9Z14LPBF , IRF9Z14PBF , IRF9Z14SPBF , IRF9Z20PBF , IRF9Z24L , IRF9Z24NLPBF , IRF9Z24NPBF .
History: IRF9310PBF | STP14NF10 | MT3203 | WTL2622 | APT6017LFLL | FDD8424HF085A | IRFS3307Z
Keywords - IRF9Z10PBF MOSFET datasheet
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History: IRF9310PBF | STP14NF10 | MT3203 | WTL2622 | APT6017LFLL | FDD8424HF085A | IRFS3307Z
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