IRF9Z10PBF Datasheet. Specs and Replacement
Type Designator: IRF9Z10PBF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-220AB
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IRF9Z10PBF substitution
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IRF9Z10PBF datasheet
irf9z10pbf.pdf
IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.50 RoHS* P-Channel Qg (Max.) (nC) 12 COMPLIANT 175 C Operating Temperature Qgs (nC) 3.8 Fast Switching Qgd (nC) 5.1 Ease of Paralleling Configuration Single Simple Drive Requi... See More ⇒
irf9z10.pdf
PD - 90459A IRF9Z10 D S D G TO-220AB GDS Gate Drain Source 06/24/05 Document Number 90118 www.vishay.com 1 IRF9Z10 Document Number 90118 www.vishay.com 2 IRF9Z10 Document Number 90118 www.vishay.com 3 IRF9Z10 Document Number 90118 www.vishay.com 4 IRF9Z10 Document Number 90118 www.vishay.com 5 IRF9Z10 Document Number 90118 www.vishay.com 6 IRF9Z10 Peak Di... See More ⇒
irf9z10 sihf9z10.pdf
IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.50 RoHS* P-Channel Qg (Max.) (nC) 12 COMPLIANT 175 C Operating Temperature Qgs (nC) 3.8 Fast Switching Qgd (nC) 5.1 Ease of Paralleling Configuration Single Simple Drive Requi... See More ⇒
Detailed specifications: IRF9630PBF, IRF9630SPBF, IRF9640L, IRF9640LPBF, IRF9640PBF, IRF9640SPBF, IRF9910PBF-1, IRF9952QPBF, BS170, IRF9Z14L, IRF9Z14LPBF, IRF9Z14PBF, IRF9Z14SPBF, IRF9Z20PBF, IRF9Z24L, IRF9Z24NLPBF, IRF9Z24NPBF
Keywords - IRF9Z10PBF MOSFET specs
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