IRFAE40 Datasheet. Specs and Replacement
Type Designator: IRFAE40 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 230 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO3
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IRFAE40 substitution
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IRFAE40 datasheet
irfae40.pdf
PD - 90579 REPETITIVE AVALANCHE AND dv/dt RATED IRFAE40 800V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAE40 800V 2.0 4.8 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art de... See More ⇒
irfae30.pdf
PD - 90614 REPETITIVE AVALANCHE AND dv/dt RATED IRFAE30 800V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAE30 800V 3.2 3.1 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desig... See More ⇒
irfae50.pdf
PD - 90574 REPETITIVE AVALANCHE AND dv/dt RATED IRFAE50 800V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAE50 800V 1.2 7.1 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desig... See More ⇒
Detailed specifications: IRF9Z34NPBF, IRF9Z34NSPBF, IRF9Z34PBF, IRF9Z34SPBF, IRFAC30, IRFAC40, IRFAC42, IRFAE30, IRF1405, IRFAE50, IRFAF30, IRFAF50, IRFAG30, IRFAG40, IRFAG50, SSM5G06FE, SSM5G09TU
Keywords - IRFAE40 MOSFET specs
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History: IRFAC30 | IRF9Z14PBF
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