IRFAF50 Datasheet. Specs and Replacement

Type Designator: IRFAF50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 66 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO3

  📄📄 Copy 

IRFAF50 substitution

- MOSFET ⓘ Cross-Reference Search

 

IRFAF50 datasheet

 ..1. Size:150K  international rectifier
 irfaf50.pdf pdf_icon

IRFAF50

PD - 90577 REPETITIVE AVALANCHE AND dv/dt RATED IRFAF50 900V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAF50 900V 1.6 6.2 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desig... See More ⇒

 9.1. Size:149K  international rectifier
 irfaf30.pdf pdf_icon

IRFAF50

PD - 90617 REPETITIVE AVALANCHE AND dv/dt RATED IRFAF30 900V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAF30 900V 4.0 2.0 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desig... See More ⇒

 9.2. Size:151K  international rectifier
 irfaf40.pdf pdf_icon

IRFAF50

PD - 90581 REPETITIVE AVALANCHE AND dv/dt RATED IRFAF40 900V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAF40 900V 2.5 4.3 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desig... See More ⇒

 9.3. Size:254K  inchange semiconductor
 irfaf30.pdf pdf_icon

IRFAF50

Isc N-Channel MOSFET Transistor IRFAF30 FEATURES With To-3 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 900 V ... See More ⇒

SHOW MORE

Detailed specifications: IRF9Z34SPBF, IRFAC30, IRFAC40, IRFAC42, IRFAE30, IRFAE40, IRFAE50, IRFAF30, IRFZ46N, IRFAG30, IRFAG40, IRFAG50, SSM5G06FE, SSM5G09TU, SSM5G10TU, SSM5G11TU, SSM5H01TU

Keywords - IRFAF50 MOSFET specs

 IRFAF50 cross reference

 IRFAF50 equivalent finder

 IRFAF50 pdf lookup

 IRFAF50 substitution

 IRFAF50 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.