IRFAF50 - параметры транзистора MOSFET, его аналоги, datasheet

IRFAF50 Datasheet (PDF)

..1. Size:150K international rectifier
irfaf50.pdf pdf_icon

PD - 90577REPETITIVE AVALANCHE AND dv/dt RATED IRFAF50900V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAF50 900V 1.6 6.2The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig

9.1. Size:149K international rectifier
irfaf30.pdf pdf_icon

PD - 90617REPETITIVE AVALANCHE AND dv/dt RATED IRFAF30900V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAF30 900V 4.0 2.0The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig

9.2. Size:151K international rectifier
irfaf40.pdf pdf_icon

PD - 90581REPETITIVE AVALANCHE AND dv/dt RATED IRFAF40900V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAF40 900V 2.5 4.3The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig

9.3. Size:254K inchange semiconductor
irfaf30.pdf pdf_icon

Isc N-Channel MOSFET Transistor IRFAF30FEATURESWith To-3 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 900 V

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .