IRFAG30 Datasheet. Specs and Replacement
Type Designator: IRFAG30 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.6 Ohm
Package: TO3
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IRFAG30 substitution
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IRFAG30 datasheet
irfag30.pdf
PD -90622 REPETITIVE AVALANCHE AND dv/dt RATED IRFAG30 1000V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAG30 1000V 5.6 2.3 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desi... See More ⇒
irfag50.pdf
PD - 90582 REPETITIVE AVALANCHE AND dv/dt RATED IRFAG50 1000V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAG50 1000V 2.0 5.6 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art des... See More ⇒
irfag40.pdf
PD -90575 REPETITIVE AVALANCHE AND dv/dt RATED IRFAG40 1000V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAG40 1000V 3.5 3.9 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desi... See More ⇒
Detailed specifications: IRFAC30, IRFAC40, IRFAC42, IRFAE30, IRFAE40, IRFAE50, IRFAF30, IRFAF50, IRF830, IRFAG40, IRFAG50, SSM5G06FE, SSM5G09TU, SSM5G10TU, SSM5G11TU, SSM5H01TU, SSM5H05TU
Keywords - IRFAG30 MOSFET specs
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