SSM5G10TU Datasheet. Specs and Replacement

Type Designator: SSM5G10TU  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 43 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.213 Ohm

Package: 2-2R1A

  📄📄 Copy 

SSM5G10TU substitution

- MOSFET ⓘ Cross-Reference Search

 

SSM5G10TU datasheet

 ..1. Size:201K  toshiba
 ssm5g10tu.pdf pdf_icon

SSM5G10TU

SSM5G10TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G10TU DC-DC Converter Applications 1.8-V drive Unit mm Combines a P-channel MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-So... See More ⇒

 8.1. Size:200K  toshiba
 ssm5g11tu.pdf pdf_icon

SSM5G10TU

SSM5G11TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G11TU DC-DC Converter Applications 4-V drive Unit mm Combined a P-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25 C) Characteristic Symbol Rating Unit Drain-source voltage VDSS -30 V Gate-source vol... See More ⇒

 9.1. Size:218K  toshiba
 ssm5g02tu.pdf pdf_icon

SSM5G10TU

SSM5G02TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G02TU DC-DC Converter Unit mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25 C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS 12 V DC ID -1.0 Drain curre... See More ⇒

 9.2. Size:290K  toshiba
 ssm5g06fe.pdf pdf_icon

SSM5G10TU

SSM5G06FE Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5G06FE DC-DC Converter Applications Unit mm Combined a P-channel MOSFET and a Schottky barrier diode in one package. 1.6 0.05 Optimum for high-density mounting in small packages 1.2 0.05 Absolute Maximum Ratings (Ta = 25 C) MOSFET 1 5 Characteristics Symbol Rating Unit 2 Drain-So... See More ⇒

SHOW MORE

Detailed specifications: IRFAE50, IRFAF30, IRFAF50, IRFAG30, IRFAG40, IRFAG50, SSM5G06FE, SSM5G09TU, K2611, SSM5G11TU, SSM5H01TU, SSM5H05TU, SSM5H06FE, SSM5H07TU, SSM5H08TU, SSM5H10TU, SSM5H11TU

Keywords - SSM5G10TU MOSFET specs

 SSM5G10TU cross reference

 SSM5G10TU equivalent finder

 SSM5G10TU pdf lookup

 SSM5G10TU substitution

 SSM5G10TU replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility