All MOSFET. SSM5G11TU Datasheet

 

SSM5G11TU MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM5G11TU
   Marking Code: KEV
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 1.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.9 nC
   Cossⓘ - Output Capacitance: 32 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.226 Ohm
   Package: 2-2R1A

 SSM5G11TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM5G11TU Datasheet (PDF)

 ..1. Size:200K  toshiba
 ssm5g11tu.pdf

SSM5G11TU SSM5G11TU

SSM5G11TU Silicon P Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5G11TU DC-DC Converter Applications 4-V driveUnit: mm Combined a P-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS -30 VGate-source vol

 8.1. Size:201K  toshiba
 ssm5g10tu.pdf

SSM5G11TU SSM5G11TU

SSM5G10TU Silicon P Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5G10TU DC-DC Converter Applications 1.8-V driveUnit: mm Combines a P-channel MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -20 VGate-So

 9.1. Size:218K  toshiba
 ssm5g02tu.pdf

SSM5G11TU SSM5G11TU

SSM5G02TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G02TU DC-DC Converter Unit: mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 12 VDC ID -1.0 Drain curre

 9.2. Size:290K  toshiba
 ssm5g06fe.pdf

SSM5G11TU SSM5G11TU

SSM5G06FE Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5G06FE DC-DC Converter Applications Unit: mm Combined a P-channel MOSFET and a Schottky barrier diode in one package. 1.60.05 Optimum for high-density mounting in small packages 1.20.05Absolute Maximum Ratings (Ta = 25C) MOSFET 1 5Characteristics Symbol Rating Unit2Drain-So

 9.3. Size:306K  toshiba
 ssm5g09tu.pdf

SSM5G11TU SSM5G11TU

SSM5G09TU Silicon P Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5G09TU DC-DC Converter Unit: mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 8 VDC ID -1.5 Drain curre

 9.4. Size:205K  toshiba
 ssm5g04tu.pdf

SSM5G11TU SSM5G11TU

SSM5G04TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G04TU DC-DC Converter Unit: mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 12 VDC ID -1.0 Drain curre

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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