Справочник MOSFET. SSM5G11TU

 

SSM5G11TU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM5G11TU
   Маркировка: KEV
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 2.9 nC
   Cossⓘ - Выходная емкость: 32 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.226 Ohm
   Тип корпуса: 2-2R1A

 Аналог (замена) для SSM5G11TU

 

 

SSM5G11TU Datasheet (PDF)

 ..1. Size:200K  toshiba
 ssm5g11tu.pdf

SSM5G11TU SSM5G11TU

SSM5G11TU Silicon P Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5G11TU DC-DC Converter Applications 4-V driveUnit: mm Combined a P-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS -30 VGate-source vol

 8.1. Size:201K  toshiba
 ssm5g10tu.pdf

SSM5G11TU SSM5G11TU

SSM5G10TU Silicon P Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5G10TU DC-DC Converter Applications 1.8-V driveUnit: mm Combines a P-channel MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -20 VGate-So

 9.1. Size:218K  toshiba
 ssm5g02tu.pdf

SSM5G11TU SSM5G11TU

SSM5G02TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G02TU DC-DC Converter Unit: mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 12 VDC ID -1.0 Drain curre

 9.2. Size:290K  toshiba
 ssm5g06fe.pdf

SSM5G11TU SSM5G11TU

SSM5G06FE Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5G06FE DC-DC Converter Applications Unit: mm Combined a P-channel MOSFET and a Schottky barrier diode in one package. 1.60.05 Optimum for high-density mounting in small packages 1.20.05Absolute Maximum Ratings (Ta = 25C) MOSFET 1 5Characteristics Symbol Rating Unit2Drain-So

 9.3. Size:306K  toshiba
 ssm5g09tu.pdf

SSM5G11TU SSM5G11TU

SSM5G09TU Silicon P Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5G09TU DC-DC Converter Unit: mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 8 VDC ID -1.5 Drain curre

 9.4. Size:205K  toshiba
 ssm5g04tu.pdf

SSM5G11TU SSM5G11TU

SSM5G04TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G04TU DC-DC Converter Unit: mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 12 VDC ID -1.0 Drain curre

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