All MOSFET. SSM5H08TU Datasheet

 

SSM5H08TU Datasheet and Replacement


   Type Designator: SSM5H08TU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 42 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: 2-2R1A
 

 SSM5H08TU substitution

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SSM5H08TU Datasheet (PDF)

 ..1. Size:306K  toshiba
 ssm5h08tu.pdf pdf_icon

SSM5H08TU

SSM5H08TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H08TU DC-DC Converter Unit: mm Nch MOSFET and schottky diode combined in one package Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 12 VDC ID 1.5Drain current A

 8.1. Size:267K  1
 ssm5h05tu.pdf pdf_icon

SSM5H08TU

SSM5H05TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H05TU DC-DC Converter Unit: mm Combined Nch MOSFET and Schottky Diode in one package. Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 12 VDC ID 1.5Drain current A

 8.2. Size:222K  toshiba
 ssm5h06fe.pdf pdf_icon

SSM5H08TU

SSM5H06FE Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5H06FE DC-DC Converter Unit: mm Combined Nch MOSFET and Schottky Diode in one Package 1.60.05 Small package 1.20.05Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating Unit 1 5Drain-Source voltage VDS 20 V 2VGSS 10 Gate-Source voltage V ID 100DC

 8.3. Size:309K  toshiba
 ssm5h07tu.pdf pdf_icon

SSM5H08TU

SSM5H07TU Silicon N Channel MOS Type (-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H07TU DC-DC Converter Unit: mm Nch MOSFET and Schottky diode combined in one package Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 12 VDC ID 1.2Drain current A

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Datasheet: SSM5G06FE , SSM5G09TU , SSM5G10TU , SSM5G11TU , SSM5H01TU , SSM5H05TU , SSM5H06FE , SSM5H07TU , AO4468 , SSM5H10TU , SSM5H11TU , SSM5H12TU , SSM5H16TU , SSM5H90ATU , SSM5P15FE , SSM60T03GH , SSM60T03GJ .

History: SWD056R68E7T | APT1004R2KN

Keywords - SSM5H08TU MOSFET datasheet

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