Справочник MOSFET. SSM5H08TU

 

SSM5H08TU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM5H08TU
   Маркировка: KER
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 42 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
   Тип корпуса: 2-2R1A

 Аналог (замена) для SSM5H08TU

 

 

SSM5H08TU Datasheet (PDF)

 ..1. Size:306K  toshiba
 ssm5h08tu.pdf

SSM5H08TU SSM5H08TU

SSM5H08TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H08TU DC-DC Converter Unit: mm Nch MOSFET and schottky diode combined in one package Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 12 VDC ID 1.5Drain current A

 8.1. Size:267K  1
 ssm5h05tu.pdf

SSM5H08TU SSM5H08TU

SSM5H05TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H05TU DC-DC Converter Unit: mm Combined Nch MOSFET and Schottky Diode in one package. Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 12 VDC ID 1.5Drain current A

 8.2. Size:222K  toshiba
 ssm5h06fe.pdf

SSM5H08TU SSM5H08TU

SSM5H06FE Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5H06FE DC-DC Converter Unit: mm Combined Nch MOSFET and Schottky Diode in one Package 1.60.05 Small package 1.20.05Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating Unit 1 5Drain-Source voltage VDS 20 V 2VGSS 10 Gate-Source voltage V ID 100DC

 8.3. Size:309K  toshiba
 ssm5h07tu.pdf

SSM5H08TU SSM5H08TU

SSM5H07TU Silicon N Channel MOS Type (-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H07TU DC-DC Converter Unit: mm Nch MOSFET and Schottky diode combined in one package Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 12 VDC ID 1.2Drain current A

 8.4. Size:205K  toshiba
 ssm5h01tu.pdf

SSM5H08TU SSM5H08TU

SSM5H01TU Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5H01TU DC-DC Converter Unit: mm Combined Nch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 30 VGate-Source voltage VGSS 20 VDC ID 1.4Drain current

 8.5. Size:304K  toshiba
 ssm5h05tu.pdf

SSM5H08TU SSM5H08TU

SSM5H05TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H05TU DC-DC Converter Unit: mm Combined Nch MOSFET and Schottky Diode in one package. Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 12 VDC ID 1.5Drain current A

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