SSM6618M MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM6618M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.4 nC
trⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SO-8
SSM6618M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM6618M Datasheet (PDF)
ssm6618m.pdf
SSM6618MN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BV 25VDSSDDFast switching speed D RDS(ON) 30mDSurface-mount package ID 7AGSSSO-8SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,ruggedized device design, ultra low on-resistance andGcost-effectiveness.SAbsolute Maximum R
ssm6680gm.pdf
SSM6680GMN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM6680GM acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 11mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 11.5AD The SSM6680M is supplied in an RoHS-compliantPb-free; RoHS-c
ssm6679gm.pdf
SSM6679GMP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DDBVDSS -30VSimple Drive Requirement DDLow On-resistance RDS(ON) 9mGFast Switching Characteristic ID -14ASSSO-8SDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. Dprovide the designer with the best combination of fast switching, ruggedized device design, low on-resist
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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