SSM6618M Datasheet. Specs and Replacement
Type Designator: SSM6618M 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SO-8
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SSM6618M substitution
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SSM6618M datasheet
ssm6618m.pdf
SSM6618M N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BV 25V DSS D D Fast switching speed D RDS(ON) 30m D Surface-mount package ID 7A G S S SO-8 S Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and G cost-effectiveness. S Absolute Maximum R... See More ⇒
ssm6680gm.pdf
SSM6680GM N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM6680GM acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It RDS(ON) 11m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 11.5A D The SSM6680M is supplied in an RoHS-compliant Pb-free; RoHS-c... See More ⇒
ssm6679gm.pdf
SSM6679GM P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D D BVDSS -30V Simple Drive Requirement D D Low On-resistance RDS(ON) 9m G Fast Switching Characteristic ID -14A S S SO-8 S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D provide the designer with the best combination of fast switching, ruggedized device design, low on-resist... See More ⇒
Detailed specifications: SSM5H16TU, SSM5H90ATU, SSM5P15FE, SSM60T03GH, SSM60T03GJ, SSM60T03GP, SSM60T03GS, SSM630GP, IRFP460, SSM6679GM, SSM6680GM, SSM6923O, SSM6G18NU, SSM6H19NU, SSM6J216FE, SSM6J414TU, SSM6J505NU
Keywords - SSM6618M MOSFET specs
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