All MOSFET. IRLMS6802 Datasheet

 

IRLMS6802 Datasheet and Replacement


   Type Designator: IRLMS6802
   Marking Code: 2E*_E*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 11 nC
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: MICRO6
 

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IRLMS6802 Datasheet (PDF)

 ..1. Size:148K  international rectifier
 irlms6802pbf.pdf pdf_icon

IRLMS6802

PD- 94897IRLMS6802PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 6l P-Channel MOSFET D DVDSS = -20Vl Surface Mount25DDl Available in Tape & Reell Lead-Free3 4G SRDS(on) = 0.050Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thi

 ..2. Size:91K  international rectifier
 irlms6802.pdf pdf_icon

IRLMS6802

PD- 91848EIRLMS6802HEXFET Power MOSFETl Ultra Low On-ResistanceA1 6l P-Channel MOSFET D DVDSS = -20Vl Surface Mount25DDl Available in Tape & Reel3 4G SRDS(on) = 0.050Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefitprov

 0.1. Size:881K  cn vbsemi
 irlms6802trpbf.pdf pdf_icon

IRLMS6802

IRLMS6802TRPBFwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mm

 8.1. Size:195K  international rectifier
 irlms6702.pdf pdf_icon

IRLMS6802

PD - 91414CIRLMS6702HEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = -20Vl Ultra Low RDS(on)25DDl P-Channel MOSFET34G S RDS(on) = 0.20DescriptionFifth Generation HEXFET power MOSFETs from Top ViewInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistanceper silicon area. T

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History: FDY3000NZ

Keywords - IRLMS6802 MOSFET datasheet

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 IRLMS6802 equivalent finder
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