SSM85T03GH Datasheet. Specs and Replacement
Type Designator: SSM85T03GH 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 77 nS
Cossⓘ - Output Capacitance: 550 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO-252
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SSM85T03GH substitution
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SSM85T03GH datasheet
ssm85t03gh ssm85t03gj.pdf
SSM85T03GH,J N-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS 30V D Simple drive requirement R 6m DS(ON) Fast switching ID 75A G Pb-free; RoHS compliant. S DESCRIPTION G The SSM85T03GH is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC... See More ⇒
ssm85t08gp.pdf
SSM85T08GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D BVDSS 80V Simple Drive Requirement RDS(ON) 13m Low On-resistance Fast Switching Characteristic ID 75A G S DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiven... See More ⇒
Detailed specifications: SSM7002EGU, SSM7002KGEN, SSM70T03GH, SSM70T03GJ, SSM72T02GH, SSM75T10GP, SSM75T10GS, SSM7811GM, IRFP260, SSM85T03GJ, SSM85T08GP, SSM90T03GH, SSM90T03GJ, SSM90T03GP, SSM90T03GS, SSM9406GM, SSM9408GH
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