SSM9685M MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM9685M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 135 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SO-8
SSM9685M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM9685M Datasheet (PDF)
ssm9685m.pdf
SSM9685MN-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV 80VDSSDDLower gate charge R 45mDS(ON)DDFast switching characteristics ID 5.3AGSSSO-8SDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, ruggedizeddevice design, low on-resistance and cost-effectiveness.GS
ssm9620m.pdf
SSM9620MP-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BVDSS -20VDDCapable of 2.5V drive D R 20mDS(ON)DFast switching ID -9.5AGSimple drive requirement SSSO-8SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.ST
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: SQM110N08-05
