SSM9915GJ Datasheet. Specs and Replacement
Type Designator: SSM9915GJ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 26 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 49.5 nS
Cossⓘ - Output Capacitance: 126 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO-251
SSM9915GJ substitution
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SSM9915GJ datasheet
ssm9915gh ssm9915gj.pdf
SSM9915H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BV 20V D DSS Capable of 2.5V gate drive R 50m DS(ON) Low drive current I 20A D G Simple drive requirement S Description G Power MOSFETs from Silicon Standard provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effective... See More ⇒
ssm9915k.pdf
SSM9915K N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple drive requirement BVDSS 20V D Lower gate charge RDS(ON) 50m Fast switching characteristic ID 6.2A S D SOT-223 G Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G low on-resistance and cost-effectiveness. S Absolute Maximum Ratings Symbol Para... See More ⇒
ssm9918gh ssm9918gj.pdf
SSM9918H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BV 20V DSS D Capable of 2.5V gate drive R 14m DS(ON) Low drive current I 45A D G Surface mount package S Description G Power MOSFETs from Silicon Standard provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectivene... See More ⇒
ssm9916gh ssm9916gj.pdf
SSM9916H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BV 18V D DSS Capable of 2.5V gate drive RDS(ON) 25m Low drive current ID 35A G Simple drive requirement S Description G Power MOSFETs from Silicon Standard provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness... See More ⇒
Detailed specifications: SSM9585GM, SSM9585GP, SSM95T06GP, SSM95T06GS, SSM95T07GP, SSM9620M, SSM9685M, SSM9915GH, AO3407, SSM9915K, SSM9916GH, SSM9916GJ, SSM9918GH, SSM9918GJ, SSM9922GEO, SSM9926EM, SSM9926GEO
Keywords - SSM9915GJ MOSFET specs
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