All MOSFET. SSM9973GJ Datasheet

 

SSM9973GJ Datasheet and Replacement


   Type Designator: SSM9973GJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO-251
 

 SSM9973GJ substitution

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SSM9973GJ Datasheet (PDF)

 ..1. Size:280K  silicon standard
ssm9973gh ssm9973gj.pdf pdf_icon

SSM9973GJ

SSM9973GH,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate-charge BV 60VDSSDSimple drive requirement R 80mDS(ON)Fast switching ID 14AGSDescriptionGThe SSM9973GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The through-h

 6.1. Size:274K  silicon standard
ssm9973gm.pdf pdf_icon

SSM9973GJ

SSM9973GMDual N-channel Enhancement-mode Power MOSFETs Simple drive requirement BV BVDSS 60VD2D2D1Lower gate charge R RDS(ON) 80mD1Fast switching characteristicsI 3.9AIIDG2S2Pb-free; RoHS compliant.G1SO-8S1DESCRIPTIOND2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, ruggedizeddevice

 8.1. Size:587K  secos
ssm9971.pdf pdf_icon

SSM9973GJ

SSM99715A, 60V,RDS(ON) 50m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionSOT-223The SSM9971 provide the designer with the best combination of fast switching,low on-resistance,cost-effectiveness and ruggedized device design.Features* Simple Drive Requirement* Low On-ResistanceMillimeter Millimeter REF. REF. Mi

 8.2. Size:238K  silicon standard
ssm9977gm.pdf pdf_icon

SSM9973GJ

SSM9977M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 60VDSSD2D2Lower gate charge R 90mDS(ON)D1D1Fast switching characteristics ID 3.5AG2S2G1SO-8S1Description D2D1Advanced Power MOSFETs from Silicon Standard provide theG2G1designer with the best combination of fast switching,ruggedized device design, low on-resistance

Datasheet: SSM9971GD , SSM9971GH , SSM9971GJ , SSM9971GM , SSM9972GI , SSM9972GP , SSM9972GS , SSM9973GH , AO3407 , SSM9973GM , SSM9974GP , SSM9974GS , SSM9975M , SSM9977GH , SSM9977GJ , SSM9977GM , SSM9980GH .

History: SMOS44N50 | SRT045N025H | SIS698DN

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