Справочник MOSFET. SSM9973GJ

 

SSM9973GJ Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSM9973GJ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 27 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 77 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO-251
     - подбор MOSFET транзистора по параметрам

 

SSM9973GJ Datasheet (PDF)

 ..1. Size:280K  silicon standard
ssm9973gh ssm9973gj.pdfpdf_icon

SSM9973GJ

SSM9973GH,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate-charge BV 60VDSSDSimple drive requirement R 80mDS(ON)Fast switching ID 14AGSDescriptionGThe SSM9973GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The through-h

 6.1. Size:274K  silicon standard
ssm9973gm.pdfpdf_icon

SSM9973GJ

SSM9973GMDual N-channel Enhancement-mode Power MOSFETs Simple drive requirement BV BVDSS 60VD2D2D1Lower gate charge R RDS(ON) 80mD1Fast switching characteristicsI 3.9AIIDG2S2Pb-free; RoHS compliant.G1SO-8S1DESCRIPTIOND2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, ruggedizeddevice

 8.1. Size:587K  secos
ssm9971.pdfpdf_icon

SSM9973GJ

SSM99715A, 60V,RDS(ON) 50m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionSOT-223The SSM9971 provide the designer with the best combination of fast switching,low on-resistance,cost-effectiveness and ruggedized device design.Features* Simple Drive Requirement* Low On-ResistanceMillimeter Millimeter REF. REF. Mi

 8.2. Size:238K  silicon standard
ssm9977gm.pdfpdf_icon

SSM9973GJ

SSM9977M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 60VDSSD2D2Lower gate charge R 90mDS(ON)D1D1Fast switching characteristics ID 3.5AG2S2G1SO-8S1Description D2D1Advanced Power MOSFETs from Silicon Standard provide theG2G1designer with the best combination of fast switching,ruggedized device design, low on-resistance

Другие MOSFET... SSM9971GD , SSM9971GH , SSM9971GJ , SSM9971GM , SSM9972GI , SSM9972GP , SSM9972GS , SSM9973GH , 5N50 , SSM9973GM , SSM9974GP , SSM9974GS , SSM9975M , SSM9977GH , SSM9977GJ , SSM9977GM , SSM9980GH .

History: DMN3052LSS | FHF630A

 

 
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