Справочник MOSFET. SSM9973GJ

 

SSM9973GJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM9973GJ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 27 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 8 nC
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 77 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO-251

 Аналог (замена) для SSM9973GJ

 

 

SSM9973GJ Datasheet (PDF)

 ..1. Size:280K  silicon standard
ssm9973gh ssm9973gj.pdf

SSM9973GJ SSM9973GJ

SSM9973GH,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate-charge BV 60VDSSDSimple drive requirement R 80mDS(ON)Fast switching ID 14AGSDescriptionGThe SSM9973GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The through-h

 6.1. Size:274K  silicon standard
ssm9973gm.pdf

SSM9973GJ SSM9973GJ

SSM9973GMDual N-channel Enhancement-mode Power MOSFETs Simple drive requirement BV BVDSS 60VD2D2D1Lower gate charge R RDS(ON) 80mD1Fast switching characteristicsI 3.9AIIDG2S2Pb-free; RoHS compliant.G1SO-8S1DESCRIPTIOND2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, ruggedizeddevice

 8.1. Size:587K  secos
ssm9971.pdf

SSM9973GJ SSM9973GJ

SSM99715A, 60V,RDS(ON) 50m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionSOT-223The SSM9971 provide the designer with the best combination of fast switching,low on-resistance,cost-effectiveness and ruggedized device design.Features* Simple Drive Requirement* Low On-ResistanceMillimeter Millimeter REF. REF. Mi

 8.2. Size:238K  silicon standard
ssm9977gm.pdf

SSM9973GJ SSM9973GJ

SSM9977M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 60VDSSD2D2Lower gate charge R 90mDS(ON)D1D1Fast switching characteristics ID 3.5AG2S2G1SO-8S1Description D2D1Advanced Power MOSFETs from Silicon Standard provide theG2G1designer with the best combination of fast switching,ruggedized device design, low on-resistance

 8.3. Size:249K  silicon standard
ssm9975m.pdf

SSM9973GJ SSM9973GJ

SSM9975M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 60VD2 DSSD2D1Lower gate charge R 21mDS(ON)D1Fast switching characteristics ID 7.6AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2ruggedized device design, low on-resistance and

 8.4. Size:717K  silicon standard
ssm9974gp ssm9974gs.pdf

SSM9973GJ SSM9973GJ

SSM9974GP,SN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9974 acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. It isRDS(ON) 12msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 72AD The SSM9974GS is in a TO-263 package, which isPb-free; RoHS-co

 8.5. Size:293K  silicon standard
ssm9972gp ssm9972gs.pdf

SSM9973GJ SSM9973GJ

SSM9972GP,SN-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60VDSSDSimple drive requirement R 18mDS(ON)Fast switching ID 60AGSDescriptionGThe SSM9972GS is in a TO-263 package, which is widely used forDScommercial and industrial surface mount applications, and is well suited TO-263 (S)for low voltage applications such as DC/DC converters. The through-

 8.6. Size:277K  silicon standard
ssm9977gh ssm9977gj.pdf

SSM9973GJ SSM9973GJ

SSM9977GH,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate-charge BV 60VDSSDSimple drive requirement R 90mDS(ON)Fast switching ID 11AGSDescriptionGThe SSM9977GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The through-h

 8.7. Size:280K  silicon standard
ssm9971gh ssm9971gj.pdf

SSM9973GJ SSM9973GJ

SSM9971GH,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate-charge BV 60VDSSDSimple drive requirement R 36mDS(ON)Fast switching ID 25AGSDescriptionGThe SSM9971GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The through-h

 8.8. Size:559K  silicon standard
ssm9972gi.pdf

SSM9973GJ SSM9973GJ

SSM9972GIN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9972GI achieves fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 18mis suitable for low voltage applications such as DC/DCconverters and general switching circuits.I 35AD Pb-free; RoHS-compliant TO-220CFMThe SSM9972GI is in TO-220CFM for

 8.9. Size:524K  silicon standard
ssm9971gm.pdf

SSM9973GJ SSM9973GJ

SSM9971GMDual N-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM9971GM acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 50mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 5AD The SSM2310GM is supplied in an RoHS-compliantPb-free; Ro

 8.10. Size:568K  silicon standard
ssm9971gd.pdf

SSM9973GJ SSM9973GJ

SSM9971GDDual N-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM9971GD acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 50mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 5AD The SSM2310GD is supplied in an RoHS-compliantPb-free; Ro

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