SSM9980GH MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM9980GH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 21 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 135 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: TO-252
SSM9980GH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM9980GH Datasheet (PDF)
ssm9980gh ssm9980gj.pdf
SSM9980GH,JN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9980Gx acheives fast switching performanceBVDSS 80Vwith low gate charge without a complex drive circuit. It isRDS(ON) 45msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 21AD The SSM9980GH is in a TO-252 package, which isPb-free; RoHS-
ssm9980m.pdf
SSM9980M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 80VD2 DSSD2D1Lower gate charge R 52mDS(ON)D1Fast switching characteristics ID 4.6AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2ruggedized device design, low on-resistance and
ssm9985gm.pdf
SSM9985GMN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY Low On-Resistance BVDSS 40VDFast Switching Speed DD RDS(ON) 15mSurface Mount Package DID 10AGSSSO-8SDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. Dprovide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and
ssm9987gh.pdf
SSM9987GHN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY BVDSS 80VDRDS(ON) 90mLow Gate Charge Single Drive Requirement ID 15AGFast Switching Performance SDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. GDSprovide the designer with the best combination of fast switching, TO-252(H)ruggedized device design, low on-resistance and c
ssm9987gm.pdf
SSM9987GMN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY D2D2Low Gate Charge BVDSS 80VD1D1Single Drive Requirement RDS(ON) 90mG2Surface Mount Package S2ID 3.5AG1SO-8 S1DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D2D1provide the designer with the best combination of fast switching, ruggedized device design, lower on-resi
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WMO175N10HG4
