SSM9980GH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSM9980GH
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 41 W
Предельно допустимое напряжение сток-исток |Uds|: 80 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 21 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 18 nC
Время нарастания (tr): 20 ns
Выходная емкость (Cd): 135 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.045 Ohm
Тип корпуса: TO-252
SSM9980GH Datasheet (PDF)
ssm9980gh ssm9980gj.pdf
SSM9980GH,JN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9980Gx acheives fast switching performanceBVDSS 80Vwith low gate charge without a complex drive circuit. It isRDS(ON) 45msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 21AD The SSM9980GH is in a TO-252 package, which isPb-free; RoHS-
ssm9980m.pdf
SSM9980M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 80VD2 DSSD2D1Lower gate charge R 52mDS(ON)D1Fast switching characteristics ID 4.6AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2ruggedized device design, low on-resistance and
ssm9985gm.pdf
SSM9985GMN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY Low On-Resistance BVDSS 40VDFast Switching Speed DD RDS(ON) 15mSurface Mount Package DID 10AGSSSO-8SDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. Dprovide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and
ssm9987gh.pdf
SSM9987GHN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY BVDSS 80VDRDS(ON) 90mLow Gate Charge Single Drive Requirement ID 15AGFast Switching Performance SDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. GDSprovide the designer with the best combination of fast switching, TO-252(H)ruggedized device design, low on-resistance and c
ssm9987gm.pdf
SSM9987GMN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY D2D2Low Gate Charge BVDSS 80VD1D1Single Drive Requirement RDS(ON) 90mG2Surface Mount Package S2ID 3.5AG1SO-8 S1DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D2D1provide the designer with the best combination of fast switching, ruggedized device design, lower on-resi
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