SSN1N45BTA Datasheet. Specs and Replacement
Type Designator: SSN1N45BTA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 50 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 29 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.25 Ohm
Package: TO-92
SSN1N45BTA substitution
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SSN1N45BTA datasheet
ssn1n45bbu ssn1n45bta.pdf
SSN1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.5A, 450V, RDS(on) = 4.25 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to 100% avalanche tes... See More ⇒
ssn1n45b.pdf
SSN1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.5A, 450V, RDS(on) = 4.25 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to 100% avalanche tes... See More ⇒
Detailed specifications: SSM9977GM, SSM9980GH, SSM9980GJ, SSM9980M, SSM9985GM, SSM9987GH, SSM9987GM, SSN1N45BBU, IRF640, SSP3N90, SSP45N20B, SSP4N60B, SSP4N80, SSP5N90, SSR1N45, SSR1N60B, SSR1N60BTM
Keywords - SSN1N45BTA MOSFET specs
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