All MOSFET. SSR1N45 Datasheet

 

SSR1N45 Datasheet and Replacement


   Type Designator: SSR1N45
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: D-PAK
 

 SSR1N45 substitution

   - MOSFET ⓘ Cross-Reference Search

 

SSR1N45 Datasheet (PDF)

 ..1. Size:104K  samsung
 ssr1n45 ssu1n45.pdf pdf_icon

SSR1N45

 9.1. Size:197K  1
 ssu1n50a ssr1n50a.pdf pdf_icon

SSR1N45

 9.2. Size:196K  1
 ssu1n60a ssr1n60a.pdf pdf_icon

SSR1N45

 9.3. Size:678K  fairchild semi
 ssr1n60b ssr1n60btm ssu1n60b.pdf pdf_icon

SSR1N45

November 2001SSR1N60B / SSU1N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.9A, 600V, RDS(on) = 12 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.9 nC)planar, DMOS technology. Low Crss ( typical 3.6 pF)This advanced technology has been especially tailored to

SHOW MORE

Datasheet: SSM9987GM , SSN1N45BBU , SSN1N45BTA , SSP3N90 , SSP45N20B , SSP4N60B , SSP4N80 , SSP5N90 , IRF3710 , SSR1N60B , SSR1N60BTM , SSR2N60B , SSRK7002LT1G , SSS4N60B , SSSF11NS65UF , SST174 , SST175 .

Keywords - SSR1N45 MOSFET datasheet

 SSR1N45 cross reference
 SSR1N45 equivalent finder
 SSR1N45 lookup
 SSR1N45 substitution
 SSR1N45 replacement

 

 
Back to Top

 


 
.