All MOSFET. SSR2N60B Datasheet

 

SSR2N60B Datasheet and Replacement


   Type Designator: SSR2N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: D-PAK
 

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SSR2N60B Datasheet (PDF)

 ..1. Size:645K  fairchild semi
 ssr2n60b ssu2n60b.pdf pdf_icon

SSR2N60B

November 2001SSR2N60B / SSU2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.8A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored

 7.1. Size:201K  1
 ssu2n60a ssr2n60a.pdf pdf_icon

SSR2N60B

 7.2. Size:505K  samsung
 ssr2n60a.pdf pdf_icon

SSR2N60B

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charac

Datasheet: SSP3N90 , SSP45N20B , SSP4N60B , SSP4N80 , SSP5N90 , SSR1N45 , SSR1N60B , SSR1N60BTM , IRFB4227 , SSRK7002LT1G , SSS4N60B , SSSF11NS65UF , SST174 , SST175 , SST176 , SST177 , SST4391 .

History: AP2R803GMT-HF | RD3P175SN

Keywords - SSR2N60B MOSFET datasheet

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