SSR2N60B Datasheet. Specs and Replacement
Type Designator: SSR2N60B 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 35 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: D-PAK
SSR2N60B substitution
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SSR2N60B datasheet
ssr2n60b ssu2n60b.pdf
November 2001 SSR2N60B / SSU2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.8A, 600V, RDS(on) = 5.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12.5 nC) planar, DMOS technology. Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored ... See More ⇒
ssr2n60a.pdf
Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Lower RDS(ON) 3.892 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charac... See More ⇒
Detailed specifications: SSP3N90, SSP45N20B, SSP4N60B, SSP4N80, SSP5N90, SSR1N45, SSR1N60B, SSR1N60BTM, 10N60, SSRK7002LT1G, SSS4N60B, SSSF11NS65UF, SST174, SST175, SST176, SST177, SST4391
Keywords - SSR2N60B MOSFET specs
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