SSTSD201 Datasheet and Replacement
Type Designator: SSTSD201
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.05 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Cossⓘ - Output Capacitance: 1 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 70 Ohm
Package: SOT-143
SSTSD201 substitution
SSTSD201 Datasheet (PDF)
sd200dc sd201dc sd202dc sd203dc sstsd201 sstsd203.pdf

High-Speed AnalogN-Channel Enhancement-ModeLLCDMOS FETSSD200 / SD201 / SD202 / SD203 / SSTSD201 / SSTSD203FEATURES DESCRIPTION High gain . . . . . . . . . . . . . . . . . . . . . 8.0 dB min @ 1 GHz The SD200 series is manufactured utilizing Calogics Low Noise. . . . . . . . . . . . . . . . . . . . . 5.0 dB max @ 1 GHz proprietary DMOS design and processing techniques
Datasheet: SST176 , SST177 , SST4391 , SST4392 , SST4393 , SST440 , SST441 , SST4416 , K4145 , SSTSD203 , SSU1N45 , SSU1N60B , SSU2N60B , SSW2N60B , SSW4N60B , AF15N50 , AFC1016 .
History: BL20N65-W | 3N165 | IRFS722 | SSN1N45BBU | NCE4525 | BL23N50-K | IPB120N06S4-H1
Keywords - SSTSD201 MOSFET datasheet
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History: BL20N65-W | 3N165 | IRFS722 | SSN1N45BBU | NCE4525 | BL23N50-K | IPB120N06S4-H1



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