All MOSFET. SSU1N45 Datasheet

 

SSU1N45 Datasheet and Replacement


   Type Designator: SSU1N45
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: I-PAK
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SSU1N45 Datasheet (PDF)

 ..1. Size:104K  samsung
 ssr1n45 ssu1n45.pdf pdf_icon

SSU1N45

 9.1. Size:197K  1
 ssu1n50a ssr1n50a.pdf pdf_icon

SSU1N45

 9.2. Size:196K  1
 ssu1n60a ssr1n60a.pdf pdf_icon

SSU1N45

 9.3. Size:688K  fairchild semi
 ssu1n50b.pdf pdf_icon

SSU1N45

April 2014SSU1N50B520V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.3A, 520V, RDS(on) = 5.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low Gate Charge (Typ. 8.3 nC)planar, DMOS technology. Low Crss (Typ. 5.5 pF)This advanced technology has been especially tailored to Fast Switching

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFS52N15DPBF | SWB050R95E8S | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003

Keywords - SSU1N45 MOSFET datasheet

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