All MOSFET. SSU1N45 Datasheet

 

SSU1N45 Datasheet and Replacement


   Type Designator: SSU1N45
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: I-PAK
 

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SSU1N45 Datasheet (PDF)

 ..1. Size:104K  samsung
 ssr1n45 ssu1n45.pdf pdf_icon

SSU1N45

 9.1. Size:197K  1
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SSU1N45

 9.2. Size:196K  1
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SSU1N45

 9.3. Size:688K  fairchild semi
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SSU1N45

April 2014SSU1N50B520V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.3A, 520V, RDS(on) = 5.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low Gate Charge (Typ. 8.3 nC)planar, DMOS technology. Low Crss (Typ. 5.5 pF)This advanced technology has been especially tailored to Fast Switching

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Datasheet: SST4391 , SST4392 , SST4393 , SST440 , SST441 , SST4416 , SSTSD201 , SSTSD203 , 5N60 , SSU1N60B , SSU2N60B , SSW2N60B , SSW4N60B , AF15N50 , AFC1016 , AFC1539 , AFC1563 .

History: SI4896DY | NTMS4816NR2G | SMK1350F | SML1004R2BN | WM06N03M | SVT25600NT | SML4080CN

Keywords - SSU1N45 MOSFET datasheet

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