SSU1N45 Datasheet. Specs and Replacement

Type Designator: SSU1N45  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm

Package: I-PAK

SSU1N45 substitution

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SSU1N45 datasheet

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SSU1N45

April 2014 SSU1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.3A, 520V, RDS(on) = 5.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low Gate Charge (Typ. 8.3 nC) planar, DMOS technology. Low Crss (Typ. 5.5 pF) This advanced technology has been especially tailored to Fast Switching... See More ⇒

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Detailed specifications: SST4391, SST4392, SST4393, SST440, SST441, SST4416, SSTSD201, SSTSD203, IRLB4132, SSU1N60B, SSU2N60B, SSW2N60B, SSW4N60B, AF15N50, AFC1016, AFC1539, AFC1563

Keywords - SSU1N45 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.