All MOSFET. SSU1N60B Datasheet

 

SSU1N60B Datasheet and Replacement


   Type Designator: SSU1N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
   Package: I-PAK
 

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SSU1N60B Datasheet (PDF)

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SSU1N60B

November 2001SSR1N60B / SSU1N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.9A, 600V, RDS(on) = 12 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.9 nC)planar, DMOS technology. Low Crss ( typical 3.6 pF)This advanced technology has been especially tailored to

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SSU1N60B

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SSU1N60B

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SSU1N60B

April 2014SSU1N50B520V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.3A, 520V, RDS(on) = 5.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low Gate Charge (Typ. 8.3 nC)planar, DMOS technology. Low Crss (Typ. 5.5 pF)This advanced technology has been especially tailored to Fast Switching

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Datasheet: SST4392 , SST4393 , SST440 , SST441 , SST4416 , SSTSD201 , SSTSD203 , SSU1N45 , AO3400 , SSU2N60B , SSW2N60B , SSW4N60B , AF15N50 , AFC1016 , AFC1539 , AFC1563 , AFC2519W .

History: FCMT250N65S3 | HYG065N15NS1P | ST3400SRG | SVF4N60CAK | 2SJ347 | SM2A08NSU

Keywords - SSU1N60B MOSFET datasheet

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