SSU1N60B Datasheet. Specs and Replacement
Type Designator: SSU1N60B 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 18 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: I-PAK
SSU1N60B substitution
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SSU1N60B datasheet
ssr1n60b ssr1n60btm ssu1n60b.pdf
November 2001 SSR1N60B / SSU1N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.9A, 600V, RDS(on) = 12 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.9 nC) planar, DMOS technology. Low Crss ( typical 3.6 pF) This advanced technology has been especially tailored to... See More ⇒
ssu1n50b.pdf
April 2014 SSU1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.3A, 520V, RDS(on) = 5.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low Gate Charge (Typ. 8.3 nC) planar, DMOS technology. Low Crss (Typ. 5.5 pF) This advanced technology has been especially tailored to Fast Switching... See More ⇒
Detailed specifications: SST4392, SST4393, SST440, SST441, SST4416, SSTSD201, SSTSD203, SSU1N45, AO3401, SSU2N60B, SSW2N60B, SSW4N60B, AF15N50, AFC1016, AFC1539, AFC1563, AFC2519W
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
