SSW2N60B Datasheet and Replacement
Type Designator: SSW2N60B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: D2-PAK
SSW2N60B substitution
SSW2N60B Datasheet (PDF)
ssi2n60b ssi2n60b ssw2n60b.pdf

November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored
ssw2n60b ssi2n60b.pdf

November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored
ssw2n60a.pdf

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V2 Lower RDS(ON) : 3.892 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara
Datasheet: SST440 , SST441 , SST4416 , SSTSD201 , SSTSD203 , SSU1N45 , SSU1N60B , SSU2N60B , 8205A , SSW4N60B , AF15N50 , AFC1016 , AFC1539 , AFC1563 , AFC2519W , AFC3326WS , AFC3346W .
History: IRFU3708PBF | NP80N055CLE | RSR010N10FHA
Keywords - SSW2N60B MOSFET datasheet
SSW2N60B cross reference
SSW2N60B equivalent finder
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History: IRFU3708PBF | NP80N055CLE | RSR010N10FHA



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