All MOSFET. SSW2N60B Datasheet

 

SSW2N60B Datasheet and Replacement


   Type Designator: SSW2N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: D2-PAK
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SSW2N60B Datasheet (PDF)

 ..1. Size:647K  fairchild semi
 ssi2n60b ssi2n60b ssw2n60b.pdf pdf_icon

SSW2N60B

November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored

 ..2. Size:648K  fairchild semi
 ssw2n60b ssi2n60b.pdf pdf_icon

SSW2N60B

November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored

 7.1. Size:218K  1
 ssi2n60a ssw2n60a.pdf pdf_icon

SSW2N60B

 7.2. Size:509K  samsung
 ssw2n60a.pdf pdf_icon

SSW2N60B

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V2 Lower RDS(ON) : 3.892 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

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Keywords - SSW2N60B MOSFET datasheet

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