All MOSFET. SSW4N60B Datasheet

 

SSW4N60B MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSW4N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: D2-PAK

 SSW4N60B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSW4N60B Datasheet (PDF)

 ..1. Size:644K  fairchild semi
 ssi4n60b ssi4n60b ssw4n60b.pdf

SSW4N60B SSW4N60B

November 2001SSW4N60B / SSI4N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to

 7.1. Size:217K  1
 ssi4n60a ssw4n60a.pdf

SSW4N60B SSW4N60B

 7.2. Size:503K  samsung
 ssw4n60a.pdf

SSW4N60B SSW4N60B

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 2.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V2 Lower RDS(ON) : 2.037 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

 9.1. Size:181K  1
 ssi4n90as ssw4n90as.pdf

SSW4N60B SSW4N60B

 9.2. Size:183K  1
 ssi4n80as ssw4n80as.pdf

SSW4N60B SSW4N60B

 9.3. Size:184K  1
 ssi4n80a ssw4n80a.pdf

SSW4N60B SSW4N60B

 9.4. Size:181K  1
 ssi4n90a ssw4n90a.pdf

SSW4N60B SSW4N60B

 9.5. Size:507K  samsung
 ssw4n80a.pdf

SSW4N60B SSW4N60B

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V2 Low RDS(ON) : 3.400 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact

 9.6. Size:881K  samsung
 ssw4n80as.pdf

SSW4N60B SSW4N60B

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V2 Low RDS(ON) : 2.450 (Typ.)c112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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